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M52D128168A-10TIG 参数 Datasheet PDF下载

M52D128168A-10TIG图片预览
型号: M52D128168A-10TIG
PDF下载: 下载PDF文件 查看货源
内容描述: 2M ×16位×4银行同步DRAM [2M x 16 Bit x 4 Banks Synchronous DRAM]
分类和应用: 存储内存集成电路光电二极管动态存储器
文件页数/大小: 47 页 / 1134 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M52D128168A  
Operation Temperature Condition -40°C~85°C  
AC OPERATING TEST CONDITIONS (VDD=1.8V ± 0.1V,TA= -40°C ~ 85°C )  
Parameter  
Value  
0.9 x VDDQ / 0.2  
0.5 x VDDQ  
tr / tf = 1 / 1  
0.5 x VDDQ  
See Fig.2  
Unit  
V
V
ns  
V
Input levels (Vih/Vil)  
Input timing measurement reference level  
Input rise and fall time  
Output timing measurement reference level  
Output load condition  
1.8V  
Vtt =0.5x VDDQ  
13.9K  
50  
Output  
VOH(DC) = VDDQ-0.2V, IOH = -0.1mA  
VOL(DC) = 0.2V, IOL = 0.1mA  
Output  
Z0=50  
10.6K  
20 pF  
20 pF  
(Fig.2) AC Output Load Circuit  
(Fig.1) DC Output Load circuit  
OPERATING AC PARAMETER  
(AC operating conditions unless otherwise noted)  
Version  
-7.5  
Parameter  
Symbol  
Unit  
Note  
-10  
Row active to row active delay  
tRRD(min)  
tRCD(min)  
15  
15  
20  
ns  
ns  
1
1
20  
RAS to CAS delay  
Row precharge time  
tRP(min)  
tRAS(min)  
15  
48  
20  
50  
ns  
ns  
1
1
Row active time  
tRAS(max)  
tRC(min)  
100  
us  
-
1
@Operating  
Row cycle time  
67.5  
90  
ns  
@Auto refresh  
tRFC(min)  
80  
1
ns  
1 , 5  
2
Last data in to new col. Address delay  
Last data in to row precharge  
tCDL(min)  
CLK  
CLK  
CLK  
CLK  
CLK  
tRDL(min)  
2
2
Last data in to burst stop  
tBDL(min)  
1
2
Col. Address to col. Address delay  
Mode Register command to Active or Refresh Command  
tCCD(min)  
1
3
tMRD(min)  
CAS latency=3  
CAS latency=2  
tREF(max)  
2
-
2
Number of valid output data  
Refresh period(4,096 rows)  
ea  
4
6
1
ms  
64  
Note: 1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time and  
then rounding off to the next higher integer.  
3. Minimum delay is required to complete write.  
4. All parts allow every cycle column address change.  
5. In case of row precharge interrupt, auto precharge and read burst stop.  
The earliest a precharge command can be issued after a Read command without the loss of data is CL+BL-2 clocks  
5. A new command may be given Trfc after self refresh exit.  
6. A maximum of eight consecutive AUTO REFRESH commands (with tRFCmin) can be posted to any given SDRAM,and  
the maximum absolute interval between any AUTO REFRESH command and the next AUTO REFRESH command is  
8x15.6μs.)  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Sep. 2008  
Revision: 1.0 5/47  
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