ESMT
M52D128168A
Operation Temperature Condition -40°C~85°C
DC CHARACTERISTICS
Recommended operating condition unless otherwise noted，TA = -40 to 85 °C
CAS
Latency
Version
Parameter
Symbol
Test Condition
Burst Length = 1
Unit Note
-7.5
-10
Operating Current
(One Bank Active)
ICC1
65
65
mA
1
tRC ≥ tRC (min), tCC ≥ tCC (min), IOL= 0mA
Precharge Standby
Current in power-down
mode
ICC2P
0.5
0.5
CKE ≤ VIL(max), tCC =15ns
mA
mA
ICC2PS
CKE ≤ VIL(max), CLK ≤ VIL(max), tCC = ∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC =10ns
10
10
mA
ICC2N
Precharge Standby
Current in non
power-down mode
Input signals are changed one time during 20ns
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
mA
mA
ICC2NS
ICC3P
5
2
CKE ≤ VIL(max), tCC =15ns
Active Standby Current
in power-down mode
ICC3PS
CKE ≤ VIL(max), CLK ≤ VIL(max), tCC = ∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC=15ns
25
mA
ICC3N
Active Standby Current
in non power-down
mode
Input signals are changed one time during 2clks
All other pins ≥ VDD-0.2V or ≤ 0.2V
(One Bank Active)
CKE ≥ VIH (min), CLK ≤ VIL(max), tCC= ∞
Input signals are stable
15
mA
mA
ICC3NS
IOL= 0mA, Page Burst
All Band Activated, tCCD = tCCD (min)
1
2
Operating Current
(Burst Mode)
75
70
ICC4
ICC5
Refresh Current
120
100
tRC ≥ tRC(min)
uA
15
45
70
TCSR range
°C
4 Banks
380
360
340
400
380
350
450
450
350
uA
uA
Self Refresh Current
ICC6
CKE ≤ 0.2V
2 Bank
1 Bank
Deep Power Down
Current
ICC7
CKE ≤ 0.2V
10
Note: 1.Measured with outputs open. Addresses are changed only one time during tCC(min).
2.Refresh period is 64ms. Addresses are changed only one time during tCC(min).
Elite Semiconductor Memory Technology Inc.
Publication Date: Sep. 2008
Revision: 1.0 4/47
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
