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M52D128168A-10TG 参数 Datasheet PDF下载

M52D128168A-10TG图片预览
型号: M52D128168A-10TG
PDF下载: 下载PDF文件 查看货源
内容描述: 2M ×16位×4手机银行同步DRAM [2M x 16 Bit x 4 Banks Mobile Synchronous DRAM]
分类和应用: 动态存储器手机
文件页数/大小: 48 页 / 1178 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT
MODE REGISTER FIELD TABLE TO PROGRAM MODES
Register Programmed with MRS
Address
Function
BA0
0
BA1
0
A11
0
A10/AP
0
A9
W.B.L
A8
0
A7
0
A6
A5
A4
A3
BT
M52D128168A
A2
A1
A0
CAS Latency
Burst Length
Test Mode
A8
0
0
1
1
A7
0
1
0
1
Type
Mode Register Set
Reserved
Reserved
Reserved
A6
0
0
0
0
1
1
1
1
CAS Latency
A5
0
0
1
1
0
0
1
1
A4
0
1
0
1
0
1
0
1
Latency
Reserved
Reserved
2
3
Reserved
Reserved
Reserved
Reserved
Burst Type
A3
0
1
Type
Sequential
Interleave
A2
0
0
0
0
1
1
1
1
A1
0
0
1
1
0
0
1
1
Burst Length
A0
0
1
0
1
0
1
0
1
BT = 0
1
2
4
8
BT = 1
1
2
4
8
Write Burst Length
A9
0
1
Length
Burst
Single Bit
Reserved Reserved
Reserved Reserved
Reserved Reserved
Full Page Reserved
Full Page Length: 512
Elite Semiconductor Memory Technology Inc.
Publication Date: Aug. 2009
Revision: 1.3
8/48