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M52D128168A-7BG2E 参数 Datasheet PDF下载

M52D128168A-7BG2E图片预览
型号: M52D128168A-7BG2E
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM, 8MX16, 6ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-54]
分类和应用: 动态存储器内存集成电路
文件页数/大小: 47 页 / 1168 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT
AC CHARACTERISTICS
(AC operating conditions unless otherwise noted)
Parameter
CLK cycle time
CLK to valid
output delay
CAS Latency =3
CAS Latency =2
CAS Latency =3
CAS Latency =2
Symbol
t
CC
t
SAC
t
OH
t
CH
t
CL
t
SS
t
SH
t
SLZ
t
SHZ
2
2
2
2
1
1
4.5
7
-5
Min
5
10
Max
1000
4.5
7
2
2
2
2
1
1
Min
6
10
-6
M52D128168A (2E)
-7
Max
1000
5
7
2.5
2.5
2.5
2
1.5
1
5
7
6
8
Min
7
10
Max
1000
6
8
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
1
1
2
3
3
3
3
2
Output data hold time
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
CLK to output in
Hi-Z
CAS Latency =3
CAS Latency =2
*All AC parameters are measured from half to half.
Note:
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf)=1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr+ tf)/2-1]ns should be added to
the parameter.
Elite Semiconductor Memory Technology Inc.
Publication Date: Aug. 2012
Revision: 1.0
6/47