ESMT
DC CHARACTERISTICS
Recommended operating condition unless otherwise noted
Parameter
Operating Current
(One Bank Active)
Precharge Standby
Current in power-down
mode
Precharge Standby
Current in non
power-down mode
Symbol
Test Condition
Burst Length = 1
t
RC
≥
t
RC
(min), t
CC
≥
t
CC
(min), I
OL
= 0mA
CKE
≤
V
IL
(max), t
CC
=15ns
CKE
≤
V
IL
(max), CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
=10ns
M52D128168A (2E)
Version
-5
50
-6
45
900
900
8
-7
40
Unit Note
I
CC1
I
CC2P
I
CC2PS
I
CC2N
mA
uA
uA
mA
1
Input signals are changed one time during 20ns
I
CC2NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
CKE
≤
V
IL
(max), t
CC
=15ns
CKE
≤
V
IL
(max), CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
=15ns
Input signals are changed one time during 2clks
All other pins
≥
V
DD
-0.2V or
≤
0.2V
I
CC3NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
I
OL
= 0mA, Page Burst
All Bank Activated, t
CCD
= t
CCD
(min)
t
RFC
≥
t
RFC
(min)
TCSR range
Full array
100
70
45
900
800
700
600
10
5
90
65
80
60
85
1000
900
uA
800
700
uA
mA
mA
mA
°C
1
2
1
2
mA
1
15
mA
mA
Active Standby Current
in power-down mode
Active Standby Current
in non power-down
mode
(One Bank Active)
Operating Current
(Burst Mode)
Refresh Current
I
CC3P
I
CC3PS
I
CC3N
I
CC4
I
CC5
Self Refresh Current
I
CC6
CKE
≤
0.2V
1/2 array
1/4 array
1/8 array
Deep Power Down
Current
I
CC7
CKE
≤
0.2V
Note:
1.Measured with outputs open. Addresses are changed only one time during t
CC
(min).
2.Refresh period is 64ms. Addresses are changed only one time during t
CC
(min).
Elite Semiconductor Memory Technology Inc.
Publication Date: Aug. 2012
Revision: 1.0
4/47
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
