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M32L1632512A-7Q 参数 Datasheet PDF下载

M32L1632512A-7Q图片预览
型号: M32L1632512A-7Q
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM, 512KX32, 6ns, CMOS, PQFP100,]
分类和应用: 时钟动态存储器内存集成电路
文件页数/大小: 54 页 / 877 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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M32L1632512A  
FUNCTION TRUTH TABLE (TABLE 1)  
Current  
State  
BA  
(A10)  
X
X
X
BA  
BA  
BA  
X
BA  
X
DSF  
ADDR  
ACTION  
Note  
CS RAS CAS WE  
H
L
L
L
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
X
H
H
H
L
L
L
L
L
X
H
H
L
H
H
H
H
L
L
L
L
X
H
H
L
L
L
L
H
H
H
L
L
L
X
H
H
H
L
L
L
L
H
H
H
L
X
H
H
H
L
L
L
L
X
H
L
X
H
H
L
L
H
H
L
L
X
H
L
H
H
L
L
H
L
L
H
L
L
X
H
L
L
H
H
L
L
H
L
L
X
X
H
L
L
H
H
L
L
X
X
X
X
L
H
L
H
L
X
X
X
CA  
RA  
RA  
PA  
X
NOP  
NOP  
ILLEGAL  
ILLEGAL  
2
2
Row Active ; Latch Row Address ; Non-IO Mask  
Row Active ; Latch Row Address ; IO Mask  
Auto Refresh or Self Refresh  
NOP  
Auto Refresh or Self Refresh  
ILLEGAL  
Mode Register Access  
Special Mode Register Access  
NOP  
IDLE  
4
5
X
X
L
L
L
H
L
BA  
OP Code  
OP Code  
X
X
X
BA  
X
BA  
BA  
BA  
BA  
X
5
6
H
X
X
X
L
H
L
H
X
L
H
X
L
H
X
X
L
H
L
H
L
H
X
L
H
X
X
X
L
H
L
H
L
X
H
H
H
H
H
H
L
L
L
L
L
X
X
X
NOP  
ILLEGAL  
2
2
6
3
CA, AP Begin Read ; Latch CA ; Determine AP  
ILLEGAL  
X
Row  
Active  
CA, AP Begin Write ; Latch CA ; Determine AP  
CA, AP Begin Write ; Latch CA ; Determine AP  
RA  
RA  
X
ILLEGAL  
Precharge  
ILLEGAL  
ILLEGAL  
X
X
X
X
ILLEGAL  
L
OP Code  
X
X
X
X
Special Mode Register Access  
NOP (Continue Burst to End  
NOP (Continue Burst to End  
Term burst Row active  
ILLEGAL  
X
H
H
H
H
H
H
H
L
X
X
X
X
Row Active)  
Row Active)  
BA  
X
CA, AP Term burst, Begin Read ; Latch CA ; Determine AP  
Read  
X
ILLEGAL  
Term burst, Begin Write ; Latch CA ; Determine AP  
Term burst, Begin Write ; Latch CA ; Determine AP  
BA  
BA  
BA  
BA  
X
X
X
X
X
X
BA  
X
BA  
BA  
CA, AP  
CA, AP  
RA  
PA  
X
3
3
2
3
ILLEGAL  
L
L
L
Term Burst, Precharge timing for Reads  
ILLEGAL  
ILLEGAL  
X
X
X
X
X
H
H
H
H
H
H
H
NOP (Continue Burst to End  
NOP (Continue Burst to End  
Row Active)  
Row Active)  
Term burst  
ILLEGAL  
Row Active  
Write  
X
CA, AP Term burst, Begin Read ; Latch CA ; Determine AP  
3
X
ILLEGAL  
Term burst, Begin Write ; Latch CA ; Determine AP  
Term burst, Begin Write ; Latch CA ; Determine AP  
CA, AP  
CA, AP  
3
3
H
Elite Semiconductor Memory Technology Inc.  
Publication Date : Jun. 2001  
Revision : 1.6 30/54  
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