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M24L816512DA-70BEG 参数 Datasheet PDF下载

M24L816512DA-70BEG图片预览
型号: M24L816512DA-70BEG
PDF下载: 下载PDF文件 查看货源
内容描述: 8兆位( 512K ×16 )伪静态RAM [8-Mbit (512K x 16) Pseudo Static RAM]
分类和应用:
文件页数/大小: 12 页 / 310 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT
Pin Configuration[2, 3, 4]
48-ball VFBGA
Top View
M24L816512DA
Product Portfolio Product
Power Dissipation
Product
Min.
M24L816512DA
2.7
V
CC
Range (V)
Speed(ns)
Max.
3.6
55
70
Operating I
CC
(mA)
f = 1MHz
Typ.[5]
2
Max.
5
f = f
MAX
Typ.[5]
11
Max.
22
17
Standby, I
SB2
(µA)
Typ. [5]
55
Max.
100
110(for V
CC
>3.3V )
Typ.
3.0
Notes:
2.DNU pins are to be left floating or tied to VSS.
3.Ball G2, H6 are the address expansion pins for the 16-Mbit and 32-Mbit densities respectively.
4.NC “no connect”—not connected internally to the die.
5.Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC (typ)
and T
A
= 25°C.
Elite Semiconductor Memory Technology Inc.
Publication Date
:
Jul. 2008
Revision
:
1.1
2/12