欢迎访问ic37.com |
会员登录 免费注册
发布采购

M24L216128SA-55BEG 参数 Datasheet PDF下载

M24L216128SA-55BEG图片预览
型号: M24L216128SA-55BEG
PDF下载: 下载PDF文件 查看货源
内容描述: 2兆位( 128K ×16 )伪静态RAM [2-Mbit (128K x 16) Pseudo Static RAM]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 14 页 / 340 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
 浏览型号M24L216128SA-55BEG的Datasheet PDF文件第1页浏览型号M24L216128SA-55BEG的Datasheet PDF文件第2页浏览型号M24L216128SA-55BEG的Datasheet PDF文件第4页浏览型号M24L216128SA-55BEG的Datasheet PDF文件第5页浏览型号M24L216128SA-55BEG的Datasheet PDF文件第6页浏览型号M24L216128SA-55BEG的Datasheet PDF文件第7页浏览型号M24L216128SA-55BEG的Datasheet PDF文件第8页浏览型号M24L216128SA-55BEG的Datasheet PDF文件第9页  
ESMT
Product Portfolio Product
Product
Min.
M24L216128SA
2.7
V
CC
Range (V)
Speed(ns)
Max.
3.6
55
70
Operating I
CC
(mA)
f = 1MHz
Typ.[5]
1
Max.
5
f = fmax
Typ.[5]
14
8
M24L216128SA
Power Dissipation
Standby I
SB2
(µA)
Typ. [5]
9
Max.
40
Typ.
3.0
Max.
22
15
Notes:
2.Ball D3, H1, G2 and ball H6 for the FBGA package can be used to upgrade to a 4-Mbit, 8-Mbit, 16-Mbit and a 32-Mbit density,
respectively.
3.NC “no connect”—not connected internally to the die.
4.DNU (Do Not Use) pins have to be left floating or tied to Vss to ensure proper application.
5.Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ.)
,
T
A
= 25°C.
Elite Semiconductor Memory Technology Inc.
Publication Date
:
Jul. 2008
Revision
:
1.2
3/14