ESMT
Maximum Ratings
(Above which the useful life may be impaired. For user
guide-lines, not tested.)Storage
Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage to
Ground Potential..............................–0.3V to V
CCMAX
+ 0.3V
DC Voltage Applied to Outputs
in High Z State[8, 9, 10]......................–0.3V to V
CCMAX
+ 0.3V
DC Input Voltage[8, 9, 10]..................–0.3V to V
CCMAX
+ 0.3V
Output Current into Outputs (LOW).............................20 mA
M24L16161ZA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)Latch-Up
Current....................................................> 200 mA
Operating Range
Range
Industrial
Ambient
Temperature (T
A
)
−40°C
to +85°C
V
CC
2.2V to 3.6V
DC Electrical Characteristics (Over the Operating Range) [8, 9, 10]
Parameter
V
CC
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
CC
Description
Supply Voltage
Output HIGH
Voltage
Output LOW
Voltage
Input HIGH
Voltage
Input LOW Voltage
Input Leakage
Current
Output Leakage
Current
V
CC
Operating
Supply Current
Automatic CE
Power-Down
Current
—CMOS Inputs
Automatic CE
Power-Down
Current
—CMOS Inputs
Deep Sleep
Current
Test Conditions
Min.
2.2
I
OH
=
−0.1
mA
V
CC
= 2.2V to 3.6V
I
OL
= 0.1 mA, V
CC
= 2.2V to 3.6V
V
CC
= 2.2V to 3.6V
V
CC
= 2.2V to 3.6V
GND
≤
V
IN
< V
CC
GND
≤
V
OUT
≤
V
CC
f = f
MAX
= 1/t
RC
f = 1 MHz
I
SB1
CE > V
CC
−
0.2V, V
IN
> V
CC
−
0.2V, V
IN
<
0.2V, f = f
MAX
(Address and Data Only), f
= 0 ( OE ,
WE
,
BHE
and
BLE
),
V
CC
=3.60V, ZZ
≥
V
CC
– 0.2V
CE > V
CC
−0.2V,
V
IN
> V
CC
−
0.2V or V
IN
< 0.2V, f = 0, V
CC
= V
CCMAX
,
ZZ
≥
V
CC
– 0.2V
-70
Typ.[4]
3.0
Max.
3.6
Unit
V
V
0.2
V
V
V
µA
µA
mA
V
CC
-0.2
0.8* V
CC
-0.3
-1
-1
V
CC
= V
CCmax
I
OUT
= 0mA
CMOS levels
18
3
55
V
CC
+0.3V
0.2* V
CC
+1
+1
25
5
70
µA
I
SB2
55
70
µA
I
ZZ
V
CC
= V
CCMAX
,
ZZ
< 0.2V, CE = HIGH or
BHE
and
BLE
= HIGH
10
µA
Capacitance[11]
Parameter
C
IN
Description
Input Capacitance
Test Conditions
T
A
= 25°C, f = 1 MHz
V
CC
= V
CC(typ)
Max.
8
Unit
pF
Notes:
8. V
IL(MIN)
= –0.5V for pulse durations less than 20 ns.
9.V
IH(Max)
= V
CC
+ 0.5V for pulse durations less than 20 ns.
10.Overshoot and undershoot specifications are characterized and are not 100% tested.
11.Tested initially and after any design or process changes that may affect these parameters..
Elite Semiconductor Memory Technology Inc.
Publication Date
:
Jul. 2007
Revision
:
1.0
7/15
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
