ESMT
M13S64164A
Operation Temperature Condition -40°C~85°C
Read with Auto Precharge (@BL=8)
0
1
2
3
4
5
6
7
8
9
10
C L K
C L K
H I G H
C K E
C S
R A S
C A S
BAa
BAa
B A 0 , B A 1
R a
R a
A1 0 /AP
AD D R
C a
( A 0~ An )
W E
Au t o p r e c h a r g e s t a r t
tR P
Note1
DQ S ( C L = 3 )
D Q ( C L = 3 )
Qa4 Qa5
Qa7
Qa0
Qa3
Qa6
Qa1 Qa2
D M
C O M M A N D
ACTIVE
READ
Note 1. The row active command of the precharge bank can be issued after tRP from this point.
The new read/write command of another activated bank can be issued from this point.
At burst read/write with auto precharge, CAS interrupt of the same bank is illegal.
Elite Semiconductor Memory Technology Inc.
Publication Date : Mar. 2009
Revision : 1.0 35/49