ESMT
DC Specifications
Parameter
Operation Current
(One Bank Active)
Operation Current
(One Bank Active)
Precharge Power-down Standby
Current
Idle Standby Current
Symbol
IDD0
IDD1
IDD2P
IDD2N
Test Condition
t
RC
= t
RC
(min) t
CK
= t
CK
(min)
Active – Precharge
Burst Length = 2 t
RC
= t
RC
(min), CL=
2.5 I
OUT
= 0mA, Active-Read-
Precharge
CKE
≤
V
IL
(max), t
CK
= t
CK
(min), All
banks idle
-5
150
160
40
100
50
110
220
220
250
5
280
M13S64164A
Operation Temperature Condition -40
°
C~85
°
C
Version
-6
130
140
40
100
40
100
200
200
220
5
260
Unit Note
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
1
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CK
=
t
CK
(min)
Active
Power-down
Standby
All banks ACT, CKE
≤
V
IL
(max), t
CK
=
IDD3P
Current
t
CK
(min)
One bank; Active-Precharge, t
RC
=
Active Standby Current
IDD3N
t
RAS
(max), t
CK
= t
CK
(min)
Burst Length = 2, CL= 2.5 , t
CK
= t
CK
Operation Current (Read)
IDD4R
(min), I
OUT
= 0mA
Burst Length = 2, CL= 2.5 , t
CK
= t
CK
Operation Current (Write)
IDD4W
(min)
Auto Refresh Current
IDD5
t
RC
≥
t
RFC
(min)
Self Refresh Current
IDD6
CKE
≤
0.2V
Operation Current
Burst Length = 4, t
RC
= t
RC
(min),
IDD7
(4 bank interleaving)
I
OUT
= 0mA
Note 1. Enable on-chip refresh and address counters.
AC Operation Conditions & Timing Specification
AC Operation Conditions
Parameter
Input High (Logic 1) Voltage, DQ, DQS and DM signals
Input Low (Logic 0) Voltage, DQ, DQS and DM signals
Input Different Voltage, CLK and CLK inputs
Input Crossing Point Voltage, CLK and CLK inputs
Symbol
V
IH
(AC)
V
IL
(AC)
V
ID
(AC)
V
IX
(AC)
Min
V
REF
+ 0.31
0.7
0.5*V
DDQ
-0.2
Max
V
REF
- 0.31
V
DDQ
+0.6
0.5*V
DDQ
+0.2
Unit
V
V
V
V
Note
1
2
Note1. V
ID
is the magnitude of the difference between the input level on CLK and the input on CLK .
2. The value of V
IX
is expected to equal 0.5*V
DDQ
of the transmitting device and must track variations in the DC level of the
same.
Input / Output Capacitance
(V
DD
= 2.3V~2.7V, V
DDQ
=2.3V~2.7V, T
A
= 25 °C , f = 1MHz)
Parameter
Input capacitance
(A0~A11, BA0~BA1, CKE, CS , RAS , CAS ,
WE
)
Input capacitance (CLK, CLK )
Data & DQS input/output capacitance
Input capacitance (DM)
C
IN1
C
IN2
C
OUT
C
IN3
2.5
2.5
4.0
4.0
3.5
3.5
5.5
5.5
pF
pF
pF
pF
Symbol
Min
Max
Unit
Elite Semiconductor Memory Technology Inc.
Publication Date : Mar. 2009
Revision : 1.0
5/49