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M13S5121632A 参数 Datasheet PDF下载

M13S5121632A图片预览
型号: M13S5121632A
PDF下载: 下载PDF文件 查看货源
内容描述: 8M ×16位×4银行双倍数据速率SDRAM [8M x 16 Bit x 4 Banks Double Data Rate SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 47 页 / 966 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M13S5121632A  
Important Notice  
All rights reserved.  
No part of this document may be reproduced or duplicated in any form or by any  
means without the prior permission of ESMT.  
The contents contained in this document are believed to be accurate at the time  
of publication. ESMT assumes no responsibility for any error in this document,  
and reserves the right to change the products or specification in this document  
without notice.  
The information contained herein is presented only as a guide or examples for  
the application of our products. No responsibility is assumed by ESMT for any  
infringement of patents, copyrights, or other intellectual property rights of third  
parties which may result from its use. No license, either express , implied or  
otherwise, is granted under any patents, copyrights or other intellectual property  
rights of ESMT or others.  
Any semiconductor devices may have inherently a certain rate of failure. To  
minimize risks associated with customer's application, adequate design and  
operating safeguards against injury, damage, or loss from such failure, should be  
provided by the customer when making application designs.  
ESMT's products are not authorized for use in critical applications such as, but  
not limited to, life support devices or system, where failure or abnormal operation  
may directly affect human lives or cause physical injury or property damage. If  
products described here are to be used for such kinds of application, purchaser  
must do its own quality assurance testing appropriate to such applications.  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Oct. 2008  
Revision : 1.0 47/47  
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