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M13S5121632A-4TG2R 参数 Datasheet PDF下载

M13S5121632A-4TG2R图片预览
型号: M13S5121632A-4TG2R
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66]
分类和应用: 动态存储器双倍数据速率光电二极管内存集成电路
文件页数/大小: 48 页 / 666 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M13S5121632A (2R)  
Power down  
Power down is entered when CKE is registered Low (no accesses can be in progress). If power down occurs when all banks are  
idle, this mode is referred to as precharge power-down; if power down occurs when there is a row active in any bank, this mode  
is referred to as active power-down.  
Entering power down deactivates the input and output buffers, excluding CLK, CLK and CKE. In power down mode, CKE Low  
must be maintained, and all other input signals are “Don’t Care”. The minimum power down duration is at least 1 tCK + tIS.  
However, power down duration is limited by the refresh requirements of the device.  
The power down state is synchronously exited when CKE is registered High (along with a NOP or DESELECT command). A  
valid command may be applied 1 tCK + tIS after exit from power down.  
C L K  
C L K  
tRP  
C K E  
tIS  
tIS  
tIS  
t
IS  
C O M M A N D  
Precharge  
Active  
Read  
Enter Precharge  
power-down  
mode  
Exit Precharge  
power-down  
mode  
Enter Active  
power-down  
mode  
Exit Active  
power-down  
mode  
Functional Truth Table  
Truth Table – CKE [Note 1~4, 6]  
COMMAND n  
CKE n-1  
CKE n  
Current State  
Power Down  
Self Refresh  
ACTION n  
NOTE  
L
L
L
X
Maintain Power Down  
Maintain Self Refresh  
Exit Power Down  
L
X
7
L
H
H
L
Power Down  
Self Refresh  
All Banks Idle  
Bank(s) Active  
All Banks Idle  
NOP or DESELECT  
NOP or DESELECT  
NOP or DESELECT  
NOP or DESELECT  
AUTO REFRESH  
L
Exit Self Refresh  
5, 7  
H
Precharge Power Down Entry  
Active Power Down Entry  
Self Refresh Entry  
H
H
L
L
H
H
See the Truth Tables as follow  
Notes:  
1. CKE n is the logic state of CKE at clock edge n; CKE n-1 was the state of CKE at the previous clock edge.  
2. Current state is the state of DDR SDRAM immediately prior to clock edge n.  
3. COMMAND n is the command registered at clock edge n, and ACTION n is the result of COMMAND n.  
4. All states and sequences not shown are illegal or reserved.  
5. DESELECT and NOP DESELECT or NOP commands should be issued on any clock edges occurring during the tXSNR or  
XSRD period. A minimum of 200 clock cycles is needed before applying any executable command, for the DLL to lock.  
t
6. Operation or timing that is not specified is illegal and after such an event, in order to guarantee proper operation, the  
DRAM must be powered down and then restarted through the specified initialization sequence before normal operation  
can continue.  
7. VREF must be maintained during Self Refresh operation.  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Feb. 2013  
Revision : 1.3 28/48  
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