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M13S5121632A-4TG2R 参数 Datasheet PDF下载

M13S5121632A-4TG2R图片预览
型号: M13S5121632A-4TG2R
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66]
分类和应用: 动态存储器双倍数据速率光电二极管内存集成电路
文件页数/大小: 48 页 / 666 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M13S5121632A (2R)  
AC Timing Parameter & Specifications – continued  
-4  
-5  
-6  
Parameter  
Symbol  
Unit  
Note  
min  
max  
min  
max  
min  
max  
Active to Precharge command  
tRAS  
tRC  
40  
70K  
40  
70K  
42  
70K  
ns  
ns  
Active to Active / Auto Refresh  
command period  
55  
70  
55  
70  
60  
72  
Auto Refresh to Active / Auto Refresh  
command period  
tRFC  
ns  
Active to Read, Write delay  
Precharge command period  
tRCD  
tRP  
15  
15  
15  
15  
18  
18  
ns  
ns  
Active to Read with Auto Precharge  
command  
(tRCD  
,
(tRCD  
,
(tRCD,  
tRAP  
tRRD  
ns  
ns  
tRAS  
)
tRAS  
)
tRAS  
)
Active bank A to Active bank B  
command  
8
10  
12  
Write recovery time  
tWR  
tWTR  
tREFI  
15  
2
15  
2
15  
1
ns  
tCK  
us  
Write data in to Read command delay  
Average periodic refresh interval  
7.8  
7.8  
7.8  
9-21  
13  
max(0.2  
5* tCK  
max(0.2  
5* tCK  
Write preamble  
tWPRE  
,
,
0.25  
tCK  
1.5ns)  
1.5ns)  
Write postamble  
tWPST  
tRPRE  
tRPST  
tWPRES  
tMRD  
0.4  
0.6  
1.1  
0.6  
0.4  
0.6  
1.1  
0.6  
0.4  
0.9  
0.4  
0
0.6  
1.1  
0.6  
tCK  
tCK  
tCK  
ns  
14  
19  
Read preamble  
0.9  
0.4  
0
0.9  
0.4  
0
Read postamble  
Clock to DQS write preamble setup time  
Mode Register Set command cycle time  
Exit self refresh to Read command  
Exit self refresh to non-Read command  
2
2
2
tCK  
tCK  
ns  
tXSRD  
tXSNR  
200  
75  
200  
75  
200  
75  
20  
(tWR/tCK  
)
(tWR/tCK  
)
(tWR/tCK  
)
Auto Precharge write  
recovery+precharge time  
tDAL  
+
+
+
tCK  
(tRP/tCK  
)
(tRP/tCK  
)
(tRP/tCK)  
Notes:  
1. All voltages referenced to VSS  
.
2. Tests for AC timing, IDD, and electrical, AC and DC characteristics, may be conducted at nominal reference/supply  
voltage levels, but the related specifications and device operation are guaranteed for the full voltage range specified.  
3. The below figure represents the timing reference load used in defining the relevant timing parameters of the part. It is  
not intended to be either a precise representation of the typical system environment nor a depiction of the actual load  
presented by a production tester. System designers will use IBIS or other simulation tools to correlate the timing  
reference load to a system environment. Manufacturers will correlate to their production test conditions (generally a  
coaxial transmission line terminated at the tester electronics).  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Feb. 2013  
Revision : 1.3 10/48