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M13S2561616A-5TIG2K 参数 Datasheet PDF下载

M13S2561616A-5TIG2K图片预览
型号: M13S2561616A-5TIG2K
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66]
分类和应用: 动态存储器双倍数据速率光电二极管内存集成电路
文件页数/大小: 49 页 / 1234 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M13S2561616A (2K)  
Operation Temperature Condition -40°C~85°C  
Read With Auto Precharge  
If a read with auto precharge command is initiated, the DDR SDRAM automatically enters the precharge operation BL/2 clock  
later from a read with auto precharge command when tRAS (min) is satisfied. If not, the start point of precharge operation will be  
delayed until tRAS (min) is satisfied. Once the precharge operation has started the bank cannot be reactivated and the new  
command can not be asserted until the precharge time (tRP) has been satisfied.  
<Burst Length = 4, CAS Latency = 2 & 2.5>  
0
1
2
3
4
5
6
7
8
9
C L K  
C L K  
Read A  
C O M M A N D  
Bank A  
ACTIVE  
N O P  
N O P  
N O P  
N O P  
N O P  
N O P  
N O P  
N O P  
Auto Precharge  
t
R A S ( m i n )  
D Q S  
H i - Z  
H i - Z  
CAS Latency = 2  
D
DOUT 0  
OUT 1  
D
OUT 2  
D
OUT 3  
D Q ' s  
D Q S  
* Bank can be reactivated at  
completion of precharge  
t
R P  
H i - Z  
H i - Z  
CAS Latency = 2.5  
D
OUT 0  
OUT 1  
D
OUT 2 DOUT 3  
D
D Q ' s  
Auto-Precharge starts  
When the Read with Auto Precharge command is issued, new command can be asserted at 4, 5 and 6 respectively as follow.  
For the same bank  
For the different bank  
Asserted  
Command  
4
5
6
4
5
6
READ  
READ  
READ  
Illegal  
Illegal  
Illegal  
Illegal  
Legal  
Legal  
Legal  
Legal  
Legal  
Legal  
Legal  
Legal  
Legal  
Legal  
Legal  
Legal  
READ with AP*1 READ with AP READ with AP  
Active  
Illegal  
Legal  
Illegal  
Legal  
Precharge  
Note 1: AP = Auto Precharge  
Elite Semiconductor Memory Technology Inc.  
Publication Date : May 2010  
Revision : 1.2 25/49  
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