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M13S2561616A-5TIG2K 参数 Datasheet PDF下载

M13S2561616A-5TIG2K图片预览
型号: M13S2561616A-5TIG2K
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66]
分类和应用: 动态存储器双倍数据速率光电二极管内存集成电路
文件页数/大小: 49 页 / 1234 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M13S2561616A (2K)  
Operation Temperature Condition -40°C~85°C  
Write Interrupted by a Write  
A Burst Write can be interrupted before completion of the burst by a new Write command, with the only restriction that the  
interval that separates the commands must be at least one clock cycle. When the previous burst is interrupted, the remaining  
addresses are overridden by the new address and data will be written into the device until the programmed burst length is  
satisfied.  
<Burst Length = 4>  
0
1
2
3
4
5
6
7
8
C L K  
C L K  
1
t C K  
W RITE A  
W RITE B  
NO P  
NO P  
NO P  
N O P  
CO MMA ND  
N OP  
N OP  
N OP  
Hi - Z  
Hi- Z  
DQ S  
DIN A0  
DIN A1  
DIN B0  
DIN B1  
DIN B2  
DIN B3  
DQ ' s  
Elite Semiconductor Memory Technology Inc.  
Publication Date : May 2010  
Revision : 1.2 21/49  
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