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M13S2561616A-6TIG2S 参数 Datasheet PDF下载

M13S2561616A-6TIG2S图片预览
型号: M13S2561616A-6TIG2S
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66]
分类和应用: 动态存储器双倍数据速率光电二极管内存集成电路
文件页数/大小: 49 页 / 1245 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT
DC Operation Conditions - continued
Parameter
Output High Current (Full strength driver – Normal)
(V
OUT
=V
DDQ
-0.373V, min V
REF
, min V
TT
)
Output Low Current (Full strength driver – Normal)
(V
OUT
= 0.373V, max V
REF
, max V
TT
)
Output High Current (Reduced strength driver –Weak)
(V
OUT
= V
DDQ
-0.763V, min V
REF
, min V
TT
)
Output Low Current (Reduced strength driver – Weak)
(V
OUT
= 0.763V, max V
REF
, max V
TT
)
Output High Current (Reduced strength driver –
Matched impedance)
(V
OUT
= V
DDQ
-1.056V, min V
REF
, min V
TT
)
Output Low Current (Reduced strength driver –
Matched impedance)
(V
OUT
= 1.056V, max V
REF
, max V
TT
)
Symbol
I
OH
I
OL
I
OH
I
OL
Min
-15
+15
-9
+9
M13S2561616A (2S)
Operation Temperature Condition -40°C~85°C
Max
Unit
mA
mA
mA
mA
Note
5, 7
5, 7
6
6
I
OH
-4.5
mA
6
I
OL
+4.5
mA
6
Notes:
1. V
REF
is expected to be equal to 0.5* V
DDQ
of the transmitting device, and to track variations in the DC level of the same.
Peak-to-peak noise on V
REF
may not exceed 2% of the DC value.
2. V
TT
is not applied directly to the device. V
TT
is system supply for signal termination resistors, is expected to be set
equal to V
REF
, and must track variations in the DC level of V
REF
.
3. V
ID
is the magnitude of the difference between the input level on CLK and the input level on CLK .
4. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire
temperature and voltage range, for device drain to source voltages from 0.25 V to 1.0 V. For a given output, it represents
the maximum difference between pullup and pulldown drivers due to process variation. The full variation in the ratio of the
maximum to minimum pullup and pulldown current will not exceed 1.7 for device drain to source voltages from 0.1 to 1.0.
5. V
OH
= 1.95V, V
OL
=0.35V.
6. V
OH
= 1.9V, V
OL
=0.4V.
7. The values of I
OH
(DC) is based on V
DDQ
= 2.3V and V
TT
= 1.19V.
The values of I
OL
(DC) is based on V
DDQ
= 2.3V and V
TT
= 1.11V.
Elite Semiconductor Memory Technology Inc.
Publication Date : Jan. 2015
Revision : 1.0
5/49