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M13S128324A-6LG 参数 Datasheet PDF下载

M13S128324A-6LG图片预览
型号: M13S128324A-6LG
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×32位×4银行双倍数据速率SDRAM [1M x 32 Bit x 4 Banks Double Data Rate SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 49 页 / 867 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M13S128324A  
Current State  
Address  
Command  
DESEL  
Action  
CS RAS CAS WE  
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
X
H
H
H
L
X
H
H
L
X
H
L
X
NOP (Idle after tRP  
NOP (Idle after tRP  
ILLEGAL  
)
)
X
NOP  
BA  
Burst Stop  
READ/WRITE  
Active  
X
H
L
BA, CA, A8  
ILLEGAL  
RE-FRESHING  
H
H
L
BA, RA  
ILLEGAL  
L
BA, A8  
PRE / PREA  
Refresh  
ILLEGAL  
L
H
L
X
ILLEGAL  
L
L
Op-Code Mode-Add  
MRS  
ILLEGAL  
X
H
H
H
L
X
H
H
L
X
H
L
X
DESEL  
NOP (Idle after tRP  
NOP (Idle after tRP  
ILLEGAL  
)
)
X
NOP  
BA  
Burst Stop  
READ / WRITE  
Active  
MODE  
REGISTER  
SETTING  
X
H
L
BA, CA, A8  
ILLEGAL  
H
H
L
BA, RA  
ILLEGAL  
L
BA, A8  
PRE / PREA  
Refresh  
ILLEGAL  
L
H
L
X
ILLEGAL  
L
L
Op-Code Mode-Add  
MRS  
ILLEGAL  
ABBREVIATIONS :  
H = High Level, L = Low level, V = Valid, X = Don’t Care  
BA = Bank Address, RA =Row Address, CA = Column Address, NOP = No Operation  
Note :  
1. All entries assume that CKE was High during the preceding clock cycle and the current clock cycle.  
2. ILLEGAL to bank in specified state; function may be legal in the bank indicated by BA, depending on the state of the  
bank.  
3. Must satisfy bus contention, bus turn around and write recovery requirements.  
4. NOP to bank precharging or in idle state. May precharge bank indicated by BA.  
5. ILLEGAL of any bank is not idle.  
6. Same bank’s previous auto precharg will not be performed. But if the bank is different, previous auto precharge will  
be performed.  
7. Refer to “Read with Auto Precharge: for more detailed information.  
ILLEGAL = Device operation and / or data integrity are not guaranteed.  
Elite Semiconductor Memory Technology Inc.  
Publication Date : May. 2007  
Revision : 1.8 31/49  
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