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M12S128324A-7TG 参数 Datasheet PDF下载

M12S128324A-7TG图片预览
型号: M12S128324A-7TG
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×32位×4银行同步DRAM [1M x 32 Bit x 4 Banks Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 46 页 / 742 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT
Version
Parameter
Col. address to col. address delay
Number of valid
Output data
Symbol
-6
t
CCD(min)
1
2
1
0
-7
CLK
ea
Unit
M12S128324A
Note
3
4
CAS latency = 3
CAS latency = 2
CAS latency = 1
Note : 1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time and then
rounding off to the next higher integer.
2. Minimum delay is required to complete write.
3. All parts allow every cycle column address change.
4. In case of row precharge interrupt, auto precharge and read burst stop.
AC CHARACTERISTICS
(AC operating condition unless otherwise noted)
-6
Parameter
CAS latency = 3
CLK cycle time
CAS latency = 2
CAS latency = 1
CAS latency = 3
CLK to valid
output delay
CAS latency = 2
CAS latency = 1
CAS latency = 3
Output data
hold time
CLK high pulsh width
CLK low pulsh width
Input setup time
Input hold time
CLK to output in Low-Z
CAS latency = 3
CLK to output
in Hi-Z
CAS latency = 2
CAS latency = 1
Note :
t
SHZ
CAS latency = 2
CAS latency = 1
t
CH
t
CL
t
SS
t
SH
t
SLZ
t
OH
2
2
2
2
2
2
1
1
5.8
7
17
t
SAC
t
CC
Symbol
Min
6
8
20
5.8
7
17
2
2
2
2.5
2.5
2
1
1
6
7
18
ns
-
ns
ns
ns
ns
ns
3
3
3
3
2
ns
2
1000
Max
Min
7
8.6
20
6
7
18
ns
1,2
1000
ns
1
Max
-7
Unit
Note
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns. (tr/2 - 0.5) ns should be considered.
3. Assumed input rise and fall time (tr & tf) =1ns.
If tr & tf is longer than 1ns. transient time compensation should be considered.
i.e., [(tr + tf)/2 – 1] ns should be added to the parameter.
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2009
Revision: 1.4
7/46