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M12L64164A-6BIG 参数 Datasheet PDF下载

M12L64164A-6BIG图片预览
型号: M12L64164A-6BIG
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×16位×4银行同步DRAM [1M x 16 Bit x 4 Banks Synchronous DRAM]
分类和应用: 存储内存集成电路动态存储器
文件页数/大小: 45 页 / 821 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT
PARAMATER
CLK cycle time
CLK to valid
output delay
Output data
hold time
CLK high pulsh width
CLK low pulsh width
Input setup time
Input hold time
CLK to output in Low-Z
CLK to output
in Hi-Z
Note :
CAS latency = 3
CAS latency = 2
CAS latency = 3
CAS latency = 2
CAS latency = 3
CAS latency = 2
CAS latency = 3
CAS latency = 2
SYMBOL
t
CC
-5
MIN
5
10
MAX
1000
4.5
6
2.0
2.0
2.5
2.5
1.5
1
0
4.5
6
2.5
2.5
2.5
2.5
1.5
1
0
M12L64164A
Operation Temperature Condition -40°C~85°C
-6
MIN
6
10
MAX
1000
5.5
6
2.5
2.5
2.5
2.5
1.5
1
0
5.5
6
6
6
MIN
7
10
-7
MAX
1000
6
6
AC CHARACTERISTICS
(AC operating condition unless otherwise noted)
UNIT
ns
NOTE
1
t
SAC
ns
1,2
t
OH
t
CH
t
CL
t
SS
t
SH
t
SLZ
t
SHZ
ns
ns
ns
ns
ns
ns
ns
2
3
3
3
3
2
-
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns. (tr/2 - 0.5) ns should be considered.
3. Assumed input rise and fall time (tr & tf) =1ns.
If tr & tf is longer than 1ns. transient time compensation should be considered.
i.e., [(tr + tf)/2 – 1] ns should be added to the parameter.
Elite Semiconductor Memory Technology Inc.
Publication Date:
Dec.
2007
Revision: 1.2
7/45