ESMT
M12L64164A
Operation Temperature Condition -40°C~85°C
Read & Write cycle with Auto Precharge @ Burst Length = 4
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
C L O C K
C K E
H I G H
C S
R A S
C A S
A D D R
R b
C a
C b
R a
A13
A12
A10/AP
R b
R a
CL = 2
D Q
QAa0 QAa1 QAa2 QAa3
DD b0 Ddb1
DD b2 DD d3
CL = 3
QAa0
QAa1
DD b0
DD d3
Ddb1 DD b2
QAa2 QAa3
W E
D Q M
Write with
Auto Precharge
(D-Bank)
Read with
Auto Precharge
( A - Bank )
Row Active
A - Bank )
Auto Precharge
Start Point
(D-Bank)
(
Row Active
( D - Bank )
Auto Precharge
Start Point
: D o n ' t C a r e
*Note : 1. tCDL should be controlled to meet minimum tRAS before internal precharge start.
(In the case of Burst Length = 1 & 2)
Elite Semiconductor Memory Technology Inc.
Publication Date: Dec. 2007
Revision: 1.2 36/45
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
