ESMT
M12L16161A
Operation temperature condition -40℃~85℃
FUNCTIONAL BLOCK DIAGRAM
LWE
Bank Select
Data Input Register
LDQM
512K x 16
DQi
512K x 16
CLK
ADD
Column Decoder
Latency & Burst Length
LCKE
Programming Register
LRAS LCBR
LWE
LDQM
LCAS
LWCBR
Timing Register
CKE
CLK
L(U)DQM
RAS
CAS
WE
CS
PIN FUNCTION DESCRIPTION
Pin
Name
System Clock
Input Function
CLK
CS
Active on the positive going edge to sample all inputs.
Disables or enables device operation by masking or enabling all inputs except
CLK, CKE and L(U)DQM.
Chip Select
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior to new command.
Disable input buffers for power down in standby.
CKE
Clock Enable
Row / column addresses are multiplexed on the same pins.
Row address : RA0 ~ RA10, column address : CA0 ~ CA7
Selects bank to be activated during row address latch time.
Selects bank for read/write during column address latch time.
A0 ~ A10/AP
BA
Address
Bank Select Address
Latches row addresses on the positive going edge of the CLK with RAS low.
Enables row access & precharge.
Latches column addresses on the positive going edge of the CLK with
Row Address Strobe
Column Address Strobe
Write Enable
RAS
CAS
CAS low.
Enables column access.
Enables write operation and row precharge.
WE
Latches data in starting from CAS , WE active.
Makes data output Hi-Z, tSHZ after the clock and masks the output.
Blocks data input when L(U)DQM active.
L(U)DQM
Data Input / Output Mask
Elite Semiconductor Memory Technology Inc.
Publication Date : May. 2007
Revision : 1.1
2/29
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
