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M12L128168A-7TIG 参数 Datasheet PDF下载

M12L128168A-7TIG图片预览
型号: M12L128168A-7TIG
PDF下载: 下载PDF文件 查看货源
内容描述: 2M ×16位×4银行同步DRAM [2M x 16 Bit x 4 Banks Synchronous DRAM]
分类和应用: 存储内存集成电路光电二极管动态存储器
文件页数/大小: 22 页 / 361 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M12L128168A  
Operation temperature condition -40°C ~85°C  
Self refresh entry command  
CLK  
CKE  
( CS ,RAS , CAS , CKE = Low , WE = High)  
CS  
After the command execution, self refresh operation continues while CKE  
remains low. When CKE goes to high, the M12L128168A exits the self refresh mode.  
During self refresh mode, refresh interval and refresh operation are performed  
internally, so there is no need for external control.  
RAS  
CAS  
Before executing self refresh, all banks must be precharged.  
WE  
A12, A13  
(Bank select)  
A10  
Add  
Fig. 7 Self refresh entry  
command  
CLK  
CKE  
Burst stop command  
H
( CS , WE = Low, RAS , CAS = High)  
CS  
This command terminates the current burst operation.  
Burst stop is valid at every burst length.  
RAS  
CAS  
WE  
A12, A13  
(Bank select)  
A10  
Add  
Fig. 8 Burst stop command  
CLK  
No operation  
CKE  
CS  
H
( CS = Low , RAS , CAS , WE = High)  
RAS  
CAS  
This command is not a execution command. No operations begin or terminate by  
this command.  
WE  
A12, A13  
(Bank select)  
A10  
Add  
Fig. 9 No operation  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Oct. 2007  
Revision: 1.2 15/43