EliteMT
M11B416256A
READ WRITE CYCLE
(LATE WRITE and READ-MODIFY-WRITE CYCLES)
tR W C
tR A S
tR P
V I H
RA S
V I L
tC S H
tR S H
tC A S
tC R P
tC L C H
tR C D
V I H
CA SL , C AS H
V I L
tA R
tR A D
tR A H
tR A L
tC A H
tA S C
C O L U M N
tA S R
V I H
A D D R
V I L
R O W
R O W
tC W L
tR W L
t W P
tR W D
tC W D
tA W D
tR C S
V I H
V I L
W E
tA A
tR A C
tC A C
tD H
tD S
tC L Z
V I / O H
V I / O L
I/O
OE
VA L I D D O U T
tO F F 2
OPE N
VA LI D D I N
tO A C
tO E H
V I H
V I L
EDO-PAGE-MODE READ CYCLE
tR A S C
tR P
V I H
V I L
RA S
tP C ( N O T E 2 )
tC S H
tR C D
tR S H
tC A S , tC L C H
tC R P
tC A S , tC L C H
tC A S , tC L C H
tC P
tC P
tC P
V I H
V I L
CA SL ,C AS H
tA R
tR A D
tR A H
tR A L
tA S C
tA S R
tA S C
tC A H
C O L U M N
tA S C
tC A H
tC A H
V I H
V I L
A D D R
W E
C O L U M N
C O L U M N
R O W
R O W
tR R H
tR C H
tR C S
V I H
V I L
t A A
tA C P
tC A C
t A A
tA C P
tC A C
t A A
tR A C
tC A C
NO TE 1
tO F F 1
tC L Z
tC O H
tC L Z
VO H
VO L
V A L I D
D A T A
I/O
OE
VAL ID D AT A
OPE N
VAL ID D AT A
OPE N
tO E H C
tO A C
tO E S
tO A C
tO F F 2
tO F F 2
tO E S
V I H
V I L
tO E P
DON'T CARE
UNDEFINED
*NOTE : 1. tOFF1 is referenced from the rising edge of RAS or CAS , whichever occurs last.
2.
tPC can be measured from falling edge of CAS to falling edge of CAS , or from rising edge of CAS to rising
edge of CAS . Both measurements must meet the tPC specification.
Elite Memory Technology Inc
Publication Date : Feb. 2004
Revision : 1.9 9/15
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
