EliteMT
M11B416256A
READ CYCLE
tR C
tR A S
tR P
V I H
V I L
RA S
tC S H
tR S H
tR R H
tC R P
tC L C H
tC A S
tR C D
V I H
V I L
CA SL , C AS H
tA R
tR A L
tC A H
tR A D
tR A H
tA S C
tA S R
V I H
V I L
A D D R
W E
R O W
R O W
C O L U M N
tR C S
tR C H
V I H
V I L
t A A
tR A C
tC A C
tC L Z
NO TE 1
tO F F 1
VO H
VO L
I/O
OE
OPE N
OPE N
VAL ID D AT A
tO F F 2
tO A C
V I H
V I L
EARLY WRITE CYCLE
tR C
tR A S
tR P
V I H
V I L
RA S
tC S H
tR S H
tC A S
tC R P
tR C D
tC L C H
V I H
V I L
CA SL , C AS H
tA R
tR A L
tC A H
tR A D
tR A H
tA S R
tA S C
V I H
V I L
C O L U M N
R O W
A D D R
R O W
tC W L
tR W L
tW C R
tW C H
tW C S
t W P
V I H
V I L
W E
tD H R
tD H
tD S
VAL ID D AT A
V I H
V I L
I/O
OE
V I H
V I L
DON'T CARE
UNDEFINED
Note: 1. tOFF1 is referenced from the rising edge of RAS or CAS , whichever occurs last.
Elite Memory Technology Inc
Publication Date : Feb. 2004
Revision : 1.9
8/15
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
