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F49L800BA-90TG 参数 Datasheet PDF下载

F49L800BA-90TG图片预览
型号: F49L800BA-90TG
PDF下载: 下载PDF文件 查看货源
内容描述: 8兆位( 1M ×8 / 512K ×16 ) 3V只有CMOS闪存 [8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory]
分类和应用: 闪存
文件页数/大小: 47 页 / 459 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
F49L800UA/F49L800BA  
11. ERASE AND PROGRAMMING PERFORMANCE  
Table 15. Erase And Programming Performance (Note.1)  
Limits  
Parameter  
Unit  
Typ.(2)  
Max.(3)  
Sector Erase Time  
Chip Erase Time  
0.7  
15  
Sec  
Sec  
14  
Byte Programming Time  
Word Programming Time  
9
11  
300  
360  
27  
17  
-
Us  
Us  
Byte Mode  
Word Mode  
9
Sec  
Chip Programming Time  
5.8  
Sec  
Erase/Program Cycles (1)  
Data Retention  
100,000  
20  
Cycles  
Years  
-
Notes:  
1.Not 100% Tested, Excludes external system level over head.  
2.Typical values measured at 25°C, 3.3V.  
3.Maximum values measured at 85°C, 2.7V.  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Jan. 2008  
Revision: 1.6  
45/47  
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