ESMT
F49L160UA/F49L160BA
Operation Temperature condition -40°C~85°C
11. ERASE AND PROGRAMMING PERFORMANCE
Table 19. Erase And Programming Performance (Note.1)
Limits
Parameter
Unit
Typ.(2)
Max.(3)
15
Sector Erase Time
0.7
15
Sec
Sec
Chip Erase Time
30
Byte Programming Time
Word Programming Time
9
300
360
54
Us
11
Us
Byte Mode
Word Mode
18
Sec
Chip Programming Time
12
36
Sec
Erase/Program Cycles (1)
Data Retention
100,000
20
Cycles
Years
Notes:
1.Not 100% Tested, Excludes external system level over head.
2.Typical values measured at 25°C, 3.3V.
3.Maximum values measured at 85°C, 3.0V.
Elite Semiconductor Memory Technology Inc.
Publication Date : Jan. 2008
Revision: 1.4 49/51