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F49L160UA_1 参数 Datasheet PDF下载

F49L160UA_1图片预览
型号: F49L160UA_1
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位( 2M ×8 / 1M ×16 ) 3V只有CMOS闪存 [16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory]
分类和应用: 闪存
文件页数/大小: 51 页 / 459 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
F49L160UA/F49L160BA  
Operation Temperature condition -40°C~85°C  
11. ERASE AND PROGRAMMING PERFORMANCE  
Table 19. Erase And Programming Performance (Note.1)  
Limits  
Parameter  
Unit  
Typ.(2)  
Max.(3)  
15  
Sector Erase Time  
0.7  
15  
Sec  
Sec  
Chip Erase Time  
30  
Byte Programming Time  
Word Programming Time  
9
300  
360  
54  
Us  
11  
Us  
Byte Mode  
Word Mode  
18  
Sec  
Chip Programming Time  
12  
36  
Sec  
Erase/Program Cycles (1)  
Data Retention  
100,000  
20  
Cycles  
Years  
Notes:  
1.Not 100% Tested, Excludes external system level over head.  
2.Typical values measured at 25°C, 3.3V.  
3.Maximum values measured at 85°C, 3.0V.  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Jan. 2008  
Revision: 1.4 49/51  
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