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F49L160UA_1 参数 Datasheet PDF下载

F49L160UA_1图片预览
型号: F49L160UA_1
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位( 2M ×8 / 1M ×16 ) 3V只有CMOS闪存 [16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory]
分类和应用: 闪存
文件页数/大小: 51 页 / 459 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
F49L160UA/F49L160BA  
Operation Temperature condition -40°C~85°C  
10.4 TEMPORARY SECTOR UNPROTECT Operation  
Table 18. Temporary Sector Unprotect  
Symbol  
Description  
Rise and Fall Time (See Note)  
All Speed Options  
Unit  
Min  
Min  
500  
ns  
T
V
ID  
VIDR  
Setup Time for Temporary Sector  
RESET  
4
us  
T
RSP  
Unprotect  
Notes:  
Not 100% tested  
Figure 24. Temporary Sector Unprotect Timing Diagram  
1 0 V  
0 o r VC C  
0 or VCC  
RE SE T  
CE  
t V I D R  
t V I DR  
P r o g r a m o r E r a s e C o m m a n d S e q u e n c e  
W E  
t RS P  
R Y/ BY  
Figure 25. DQ6 vs DQ2 for Erase and Erase Suspend Operations  
Ente r E r as e  
Suspend Progra m  
En ter E m bedde d  
Er as in g  
Er as e  
Suspen d  
Er as e  
Resu m e  
W E  
DQ6  
DQ2  
Er as e  
Co m pl e t e  
Er as e  
Suspend  
Read  
Er as e  
Suspend  
Pr o gr a m  
Er as e  
Notes :  
The system can use OE or CE to toggle DQ2 / DQ6, DQ2 toggles only when read at an address within an  
erase-suspended.  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Jan. 2008  
Revision: 1.4 46/51  
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