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F49L160BA 参数 Datasheet PDF下载

F49L160BA图片预览
型号: F49L160BA
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位( 2M ×8 / 1M ×16 ) 3V只有CMOS闪存 [16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory]
分类和应用: 闪存
文件页数/大小: 51 页 / 434 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
F49L160UA/F49L160BA  
8. ABSOLUTE MAXIMUM RATINGS  
Storage Temperature  
Plastic Packages . . . . . . . . . . . . . . –65°C to +150°C  
Ambient Temperature  
with Power Applied. . . . . . . .. . . . . . –65°C to +125°C  
Voltage with Respect to Ground  
VCC (Note 1) . . . . . . . . . . .–0.5 V to +4.0 V  
2. Minimum DC input voltage on pins A9,  
,
OE  
is -0.5 V. During voltage  
transitions, A9, and may  
and  
RESET  
,
OE  
RESET  
overshoot V to –2.0 V for periods of up to 20  
SS  
ns. See Figure 1. Maximum DC input voltage  
on pin A9 is +12.5 V which may overshoot to  
14.0 V for periods up to 20 ns.  
A9,  
,
OE  
and  
(Note 2) …. . . .. . . . . –0.5 V to +12.5 V  
RESET  
3. No more than one output may be shorted to  
ground at a time. Duration of the short circuit  
should not be greater than one second.  
All other pins (Note 1). . . . . . . . . . –0.5 V to VCC +0.5 V  
Output Short Circuit Current (Note 3) .. . .. 200 mA  
Notes:  
Stresses above those listed under “Absolute Maximum  
Ratings” may cause permanent damage to the device.  
This is  
a stress rating only; functional operation of the device at  
these or any other conditions above those indicated in the  
operational sections of this data sheet is not implied.  
Exposure of the device to absolute maximum rating  
conditions for extended periods may affect device  
reliability.  
1. Minimum DC voltage on input or I/O pins  
is –0.5 V. During voltage transitions, input or  
I/O pins may overshoot V to  
SS  
–2.0 V for periods of up to 20 ns. See Figure 1.  
Maximum DC voltage on input or I/O pins is  
V
CC  
+0.5 V. During voltage transitions, input or  
I/O pins may overshoot to V  
+2.0 V for  
CC  
periods up to 20 ns. See Figure 2.  
Figure 1. Maximum Negative Overshoot Waveform  
20ns  
20ns  
+0 . 8 V  
- 0. 5V  
- 2. 0V  
20ns  
Figure 2. Maximum Positive Overshoot Waveform  
20ns  
Vc c  
+ 2 . 0 V  
Vc c  
+ 0 . 5 V  
2. 0V  
20ns  
20ns  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Dec. 2006  
Revision: 1.3 22/51  
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