EFST
F49L004UA / F49L004BA
10. AC CHARACTERISTICS
TEST CONDITIONS
Figure 3. Test Setup
2.7K
Ω
DEVICE UNDER
TEST
+3.3V
DIODES = IN3064
OR EQUIVALENT
CL
6.2KΩ
CL = 100pF Including jig capacitance
CL = 30pF for F49L004U(B)A
Figure 4. Input Waveforms and Measurement Levels
3. 0V
0V
1. 5V
1. 5V
Test Poin t s
Inpu t
Out pu t
A C TE S TIN G
In p ut p ul s e r i s e a nd f a l l ti m e s a re
:
In p u t s a r e d ri v e n a t 3 . 0 V f o r
5 n s .
a
l o g i c " 1 " a n d 0 V f o r
a
l o g i c " 0 "
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Elite Flash Storage Technology Inc.
Publication Date : Sep. 2003
Revision: 1.0 19/46
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
