EFST
9. OPERATING RANGES
F49B002UA
Commercial (C) Devices Ambient Temperature (TA) . . . . . . . . . . . 0°C to +70°C
VCC Supply Voltages VCC for all devices . . . . . . . . . . . . . . . . . . . . .4.5 V to 5.5 V
Operating ranges define those limits between which the functionality of the device is guaranteed.
Table 7. Capacitance TA = 25°C , f = 1.0 MHz
Symbol
CIN1
Description
Conditions
VIN = 0V
Min.
Typ.
Max.
6
Unit
pF
Input Capacitance
CIN2
Control Pin
VIN = 0V
12
pF
Capacitance
COUT
Output Capacitance
VOUT = 0V
12
pF
10. DC CHARACTERISTICS
Table 8. DC Characteristics TA = 0C to 70C, VCC = 4.5V to 5.5V
Symbol
ILI
Description
Conditions
Min.
Typ.
Max.
Unit
uA
uA
mA
mA
uA
mA
V
Input Leakage Current
Output Leakage Current
VCC Active Read Current
VCC Active Write Current
CMOS Standby Current
TTL Standby Current
Input Low Voltage(Note 1)
Input High Voltage
VIN = VSS or VCC, VCC = VCC max.
VOUT = VSS or VCC, VCC = VCC max
-
-
-
10
ILO
-
10
ICC1
ICC2
ICC3
ICC4
VIL
= V ,
= VIH, f = 5MHz
-
-
25
CE
OE
IL
= V ±
= VIH
OE
-
-
15
25
0.2
-
30
CE
CE
IL
= VCC ± 0.3V
50
5
= V
CE
-
IH
-
-
-0.3
2.0
0.8
VIH
-
VDD + 0.5
V
Voltage for Auto-Select
and Temporary Sector
Unprotect
VID
VCC =5.0V
11.5
-
12.5
V
VOL
VOH1
VLKO
Output Low Voltage
Output High Voltage(TTL)
Low VCC Lock-out Voltage
IOL = 2.1mA
IOH = 0.4mA
-
-
-
-
-
0.45
V
V
V
2.4
3.2
-
-
Elite Flash Storage Technology Inc.
Publication Date : Jun. 2003
Revision: 1.2 12/33
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
