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F25S04PA-50DG 参数 Datasheet PDF下载

F25S04PA-50DG图片预览
型号: F25S04PA-50DG
PDF下载: 下载PDF文件 查看货源
内容描述: 2.5V只有4兆位串行闪存,带有双输出 [2.5V Only 4 Mbit Serial Flash Memory with Dual Output]
分类和应用: 闪存存储内存集成电路光电二极管时钟
文件页数/大小: 34 页 / 382 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
(Preliminary)  
F25S04PA  
Write Enable (WREN)  
The Write Enable (WREN) instruction sets the Write-Enable-  
Latch bit in the Software Status Register to 1 allowing Write  
operations to occur.  
(Program/Erase) operation. CE must be driven high before the  
WREN instruction is executed.  
The WREN instruction must be executed prior to any Write  
CE  
0 1 2 3 4 5 6 7  
MODE3  
MODE0  
SCK  
SI  
06  
MSB  
HIGH IMPENANCE  
SO  
Figure 12: Write Enable (WREN) Sequence  
Write Disable (WRDI)  
The Write Disable (WRDI) instruction resets the Write-Enable-  
Latch bit to 0 disabling any new Write operations from occurring.  
CE must be driven high before the WRDI instruction is  
executed.  
CE  
0 1 2 3 4 5 6 7  
MODE3  
SCK  
SI  
MODE0  
04  
MSB  
HIGH IMPENANCE  
CE  
SO  
Figure 13: Write Disable (WRDI) Sequence  
Elite Semiconductor Memory Technology Inc.  
Publication Date: May 2009  
Revision: 0.2 16/34  
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