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F25S04PA-50DG 参数 Datasheet PDF下载

F25S04PA-50DG图片预览
型号: F25S04PA-50DG
PDF下载: 下载PDF文件 查看货源
内容描述: 2.5V只有4兆位串行闪存,带有双输出 [2.5V Only 4 Mbit Serial Flash Memory with Dual Output]
分类和应用: 闪存存储内存集成电路光电二极管时钟
文件页数/大小: 34 页 / 382 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
(Preliminary)  
F25S04PA  
Fast Read Dual Output (50 MHz ~ 100 MHz)  
The Fast Read Dual Output (3BH) instruction is similar to the  
standard Fast Read (0BH) instruction except the data is output  
on SI and SO pins. This allows data to be transferred from the  
device at twice the rate of standard SPI devices. This instruction  
is for quickly downloading code from Flash to RAM upon  
power-up or for applications that cache code- segments to RAM  
for execution.  
The Fast Read Dual Output instruction is initiated by executing  
an 8-bit command, 3BH, followed by address bits [A23 -A0] and a  
dummy byte. CE must remain active low for the duration of the  
Fast Read Dual Output cycle. See Figure 4 for the Fast Read  
Dual Output sequence.  
Figure 4: Fast Read Dual Output Sequence  
Elite Semiconductor Memory Technology Inc.  
Publication Date: May 2009  
Revision: 0.2  
12/34