ESMT
(Preliminary)
F25L32QA
ELECTRICAL SPECIFICATIONS
Absolute Maximum Stress Ratings
(Applied conditions are greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this datasheet is not implied. Exposure to absolute maximum stress rating conditions may affect device
reliability.)
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to VDD+2.0V
Package Power Dissipation Capability (TA = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Surface Mount Lead Soldering Temperature (3 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240°C
Output Short Circuit Current (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
( Note 1: Output shorted for no more than one second. No more than one output shorted at a time. )
TABLE 9: AC CONDITIONS OF TEST
Input Rise/Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 ns
Output Load . . . . . . . . . . . . . . . . . . . . . . . . CL = 15 pF for ≧75MHz
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .CL = 30 pF for ≦50MHz
See Figures 34 and 35
TABLE 10: OPERATING RANGE
Parameter
Symbol
Value
Unit
VDD
2.7 ~ 3.6
V
Operating Supply Voltage
Ambient Operating Temperature
VDD (FCLK > 50MHz)
TA
3.0 ~ 3.6
0 ~ 70
V
℃
TABLE 11: DC OPERATING CHARACTERISTICS
Limits
Max
15
Symbol
Parameter
Test Condition
Min
Unit
Standard
Dual
Quad
Read Current
@ 33MHz
IDDR1
mA
18
20
20
23
25
23
25
28
CE =0.1 VDD/0.9 VDD, SO=open
CE =0.1 VDD/0.9 VDD, SO=open
CE =0.1 VDD/0.9 VDD, SO=open
CE =0.1 VDD/0.9 VDD, SO=open
Standard
Dual
Quad
Read Current
@ 50MHz
IDDR2
IDDR3
IDDR4
mA
mA
mA
Standard
Dual
Quad
Read Current
@ 86MHz
Standard
Dual
Quad
25
28
30
Read Current
@ 100MHz
IDDW
ISB1
ISB2
Program and Erase Current
Standby Current
35
30
5
mA
µA
µA
CE =VDD
CE =VDD, VIN =VDD or VSS
Deep Power Down Current
CE =VDD, VIN =VDD or VSS
VIN=GND to VDD, VDD=VDD Max
VOUT=GND to VDD, VDD=VDD Max
VDD=VDD Min
VDD=VDD Max
IOL=100 µA, VDD=VDD Min
IOH=-100 µA, VDD=VDD Min
ILI
ILO
VIL
VIH
VOL
VOH
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
1
1
0.8
µA
µA
V
V
V
0.7 x VDD
VDD-0.2
0.2
V
Elite Semiconductor Memory Technology Inc.
Publication Date: Jan. 2009
Revision: 0.2 33/42
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
