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F25L32QA-86PAG 参数 Datasheet PDF下载

F25L32QA-86PAG图片预览
型号: F25L32QA-86PAG
PDF下载: 下载PDF文件 查看货源
内容描述: 3V只有32兆位串行闪存,配有双核和四 [3V Only 32 Mbit Serial Flash Memory with Dual and Quad]
分类和应用: 闪存
文件页数/大小: 42 页 / 484 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
(Preliminary)  
F25L32QA  
Quad Page Program  
The Quad Page Program instruction allows many bytes to be  
programmed in the memory by using four I/O pins (SIO0, SIO1,  
SIO2 and SIO3). The instruction can improve programmer  
performance and the effectiveness of application that have slow  
clock speed <20MHz. For system with faster clock, this  
instruction can’t provide more actual favors, because the required  
internal page program time is far more than the time data flows in.  
Therefore, we suggest that user can execute this command while  
the clock speed <20MHz.  
Prior to Quad Page Program operation, the Write Enable (WREN)  
instruction must be executed and Quad Enable (QE) bit of Status  
Register-2 must be set “1”. The other function descriptions are as  
same as standard Page Program. See Figure 11 for the Quad  
Page Program sequence.  
CE  
0
1
2
3
4
5
6
7
8
15 16  
23 24  
31 32 3334 35 36 37 3839  
MODE3  
MODE0  
SCK  
SS  
32  
ADD.  
MSB  
ADD.  
ADD.  
4
5
0
1
0
1
4
5
0
1
0
1
4
0
SIO0  
SIO1  
SIO2  
SIO3  
4
5
4
5
SS  
MSB  
SS  
SS  
SS  
5
6
7
1
2
3
DIN 0 DIN 1 DIN2 DIN3  
DIN255  
Figure 11: Quad Page Program Sequence  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Jan. 2009  
Revision: 0.2 21/42  
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