欢迎访问ic37.com |
会员登录 免费注册
发布采购

F25L32PA-86PHG 参数 Datasheet PDF下载

F25L32PA-86PHG图片预览
型号: F25L32PA-86PHG
PDF下载: 下载PDF文件 查看货源
内容描述: 3V只有32兆位串行闪存,配有双 [3V Only 32 Mbit Serial Flash Memory with Dual]
分类和应用: 闪存存储内存集成电路光电二极管时钟
文件页数/大小: 36 页 / 373 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
 浏览型号F25L32PA-86PHG的Datasheet PDF文件第9页浏览型号F25L32PA-86PHG的Datasheet PDF文件第10页浏览型号F25L32PA-86PHG的Datasheet PDF文件第11页浏览型号F25L32PA-86PHG的Datasheet PDF文件第12页浏览型号F25L32PA-86PHG的Datasheet PDF文件第14页浏览型号F25L32PA-86PHG的Datasheet PDF文件第15页浏览型号F25L32PA-86PHG的Datasheet PDF文件第16页浏览型号F25L32PA-86PHG的Datasheet PDF文件第17页  
ESMT  
F25L32PA  
Table 5: Device Operation Instruction - Continued  
Bus Cycle 1~3  
Max.  
Freq  
Operation  
1
2
3
4
5
6
N
SIN SOUT  
SIN  
SOUT  
SIN  
SOUT SIN SOUT SIN SOUT SIN SOUT SIN SOUT  
Jedec Read ID  
9FH Hi-Z  
X
8CH  
X
20H  
X
16H  
-
-
-
-
-
-
-
-
(JEDEC-ID) 9  
50MHz  
~
00H Hi-Z  
01H Hi-Z  
X
8CH  
X
15H  
Read ID (RDID) 11  
90H Hi-Z  
00H  
Hi-Z  
00H  
Hi-Z  
100MHz  
X
15H  
X
8CH  
-
-
Notes:  
1. Operation: SIN = Serial In, SOUT = Serial Out, Bus Cycle 1 = Op Code  
2. X = Dummy Input Cycles (VIL or VIH); - = Non-Applicable Cycles (Cycles are not necessary); cont. = continuous  
3. One bus cycle is eight clock periods.  
4. Sector Earse addresses: use AMS -A12, remaining addresses can be VIL or VIH  
Block Earse addresses: use AMS -A16, remaining addresses can be VIL or VIH  
5. To continue programming to the next sequential address location, enter the 8-bit command, followed by the data to be  
programmed.  
6. The Read-Status-Register is continuous with ongoing clock cycles until terminated by a low to high transition on CE .  
7. The Enable-Write-Status-Register (EWSR) instruction and the Write-Status-Register (WRSR) instruction must work in  
conjunction of each other. The WRSR instruction must be executed immediately (very next bus cycle) after the EWSR  
instruction to make both instructions effective.  
8. The Read-Electronic-Signature is continuous with on going clock cycles until terminated by a low to high transition on CE .  
9. The JEDEC-Read-ID is output first byte 8CH as manufacture ID; second byte 20H as top memory type; third byte 16H as  
memory capacity.  
10. The Write-Enable (WREN) instruction and the Write-Status-Register (WRSR) instruction must work in conjunction of each  
other. The WRSR instruction must be executed immediately (very next bus cycle) after the WREN instruction to make both  
instructions effective. Both EWSR and WREN can enable WRSR, user just need to execute one of it. A successful WRSR  
can reset WREN.  
11. The Manufacture ID and Device ID output will repeat continuously until CE terminates the instruction.  
12. Dual commands use bidirectional IO pins. DOUT and cont. are serial data out; others are serial data in.  
13. Dual output data:  
IO  
IO  
0
= (D  
6
, D  
4
, D  
2
, D  
0
), (D  
6
, D  
4
, D  
2
, D  
0
)
)
1
= (D  
7
, D5  
, D3  
, D1  
), (D  
7
, D5  
, D3  
, D1  
DOUT0  
DOUT1  
14. M7-M0: Mode bits. Dual input address:  
IO  
IO  
0
= (A22, A20, A18, A16, A14, A12, A10, A  
8
)
(A  
6
, A  
4
, A  
2
, A  
0
, M  
6
, M  
4
, M  
2
, M  
0
)
1
= (A23, A21, A19, A17, A15, A13, A11, A  
9
)
(A7  
, A  
5
, A  
3
, A  
1
, M  
7
, M  
5
, M  
3
, M  
1
)
Bus Cycle-2  
Bus Cycle-3  
15. This instruction is recommended when using the Dual Mode bit feature.  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Mar. 2009  
Revision: 1.0 13/36