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F25L32QA-86PAG2S 参数 Datasheet PDF下载

F25L32QA-86PAG2S图片预览
型号: F25L32QA-86PAG2S
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 32MX1, PDSO8, 0.208 INCH, 1.27 MM PITCH, ROHS COMPLIANT, SOIC-8]
分类和应用: 时钟光电二极管内存集成电路
文件页数/大小: 51 页 / 411 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
F25L32QA (2S)  
Program / Erase Suspend  
The Program/Erase Suspend instruction allows the system to  
interrupt a Sector or Block Erase and page or Quad page  
program operation and then read from, any other sector or block.  
The Write Status Register instruction and Program instruction  
and Sector/Block Erase instructions are not allowed during  
suspend. Program/Erase Suspend is valid only during the  
Program and Sector or Block Erase operation. If written during  
the Chip Erase, the Program/Erase Suspend instruction is  
ignored. A maximum of TSUS is required to suspend the program /  
erase operation. The BUSY bit in the Software Status Register  
will clear to “0” after Erase Suspend. A power-off during the  
suspend period will reset the device and release the suspend  
status.  
CE  
0
1
2
3
4
5
6
7
MODE3  
TSUS  
SCK MODE0  
SI  
75  
MSB  
HIGH IMPEDANCE  
SO  
Accept Read or Program/Erase Instruction  
Figure 17: Program/Erase Suspend Instruction  
Program / Erase Resume  
The Program/Erase Resume instruction must be written to  
resume the Page or Quad page program and Sector or Block  
Erase operation after Program/Erase Suspend. After issued the  
BUSY bit in the Software Status Register will be set to “1” and the  
sector or block will complete the program/erase operation.  
Program/Erase Resume instruction will be ignored unless an  
Program/Erase Suspend operation is active.  
CE  
0
1
2
3
4
5
6
7
MODE3  
SCK MODE0  
SI  
7A  
MSB  
Resume Sector or Block Program/Erase  
Figure 18: Program/Erase Resume Instruction  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Apr. 2013  
Revision: 1.7  
31/51  
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