ESMT
F25L16PA (2S)
TABLE 14: AC OPERATING CHARACTERISTICS - Continued
50 MHz
86 MHz
100 MHz
Symbol
Parameter
Unit
Min
Max
Min
Max
Min
Max
TOH
TV
Output Hold from SCK Change
0
0
0
ns
ns
ns
ns
us
us
us
us
Output Valid from SCK
8
20
100
3
8
20
100
3
8
20
100
3
4
TWHSL
Write Protect Setup Time before CE Low
Write Protect Hold Time after CE High
CE High to Deep Power Down Mode
CE High to Standby Mode ( for DP)
CE High to Standby Mode (for RES)
CE High to next Instruction after Suspend
4
TSHWL
3
TDP
3
TRES1
3
3
3
3
TRES2
1.8
20
1.8
20
1.8
20
3
TSUS
Note:
1. Relative to SCK.
2. TSCKH + TSCKL must be less than or equal to 1/ FCLK
.
3. Value guaranteed by characterization, not 100% tested in production.
4. Only applicable as a constraint for a Write status Register instruction when Block- Protection-Look (BPL) bit is set at 1.
TABLE 15: ERASE AND PROGRAMMING PERFORMANCE
Limit
Unit
Parameter
Symbol
Typ2
120
500
1
Max3
250
1000
2
Sector Erase Time (4KB)
TSE
TBE1
TBE2
TCE
TW
ms
ms
Block Erase Time (32KB)
Block Erase Time (64KB)
Chip Erase Time
s
10
30
15
5
s
Write Status Register Time
Page Programming Time
Erase/Program Cycles1
Data Retention
10
ms
TPP
1.5
ms
100,000
20
-
Cycles
Years
-
Notes:
1. Not 100% Tested, Excludes external system level over head.
2. Typical values measured at 25°C, 3V.
3. Maximum values measured at 85°C, 2.7V.
Elite Semiconductor Memory Technology Inc.
Publication Date: Nov. 2012
Revision: 1.4 31/42
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
