ESMT
F25L16PA (2S)
ELECTRICAL SPECIFICATIONS
Absolute Maximum Stress Ratings
(Applied conditions are greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this datasheet is not implied. Exposure to absolute maximum stress rating conditions may affect device
reliability.)
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to VDD+2.0V
Package Power Dissipation Capability (TA = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Surface Mount Lead Soldering Temperature (3 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
Output Short Circuit Current (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
( Note 1: Output shorted for no more than one second. No more than one output shorted at a time. )
TABLE 9: AC CONDITIONS OF TEST
Input Rise/Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 ns
Output Load . . . . . . . . . . . . . . . . . . . . . . . . CL = 15 pF for ≧75MHz
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .CL = 30 pF for ≦50MHz
See Figures 30 and 31
TABLE 10: OPERATING RANGE
Parameter
Symbol
VDD
Value
Unit
2.7 ~ 3.6
-40 ~ +85
Operating Supply Voltage
Ambient Operating Temperature
V
℃
TA
TABLE 11: DC OPERATING CHARACTERISTICS
Limits
Max
Symbol
Parameter
Test Condition
Min
Unit
Read Current
@ 50MHz
Standard
Dual
10
12
IDDR1
mA
CE =0.1 VDD/0.9 VDD, SO=open
Read Current
@ 86MHz
Read Current
@ 100MHz
Program and Write Status
Register Current
Standard
Dual
Standard
Dual
15
16.5
22
IDDR2
IDDR3
IDDW
mA
mA
mA
CE =0.1 VDD/0.9 VDD, SO=open
CE =0.1 VDD/0.9 VDD, SO=open
CE =VDD
23.5
15
Sector and Block Erase Current
Chip Erase Current
15
20
25
10
mA
mA
µA
CE =VDD
IDDE
CE =VDD
ISB1
ISB2
Standby Current
CE =VDD, VIN =VDD or VSS
CE =VDD, VIN =VDD or VSS
Deep Power Down Current
µA
ILI
ILO
VIL
VIH
VOL
VOH
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
1
1
µA VIN=GND to VDD, VDD=VDD Max
µA VOUT=GND to VDD, VDD=VDD Max
V
V
-0.5
0.7 x VDD
0.3 x VDD
VDD +0.4
0.4
V
V
IOL=1.6 mA
IOH=-100 µA
VDD-0.2
Elite Semiconductor Memory Technology Inc.
Publication Date: Nov. 2012
Revision: 1.4 29/42
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
