ESMT
F25L08PA
Operation Temperature Condition -40°C~85°C
ERASE AND PROGRAMMING PERFORMANCE
Limit
Unit
Parameter
Symbol
Typ2
Max3
Sector Erase Time
TSE
TBE
TCE
TBP
TPP
90
200
2
ms
s
Block Erase Time
1
10
Chip Erase Time
30
30
5
s
Byte Programming Time
Page Programming Time
Chip Programming Time
Erase/Program Cycles1
Data Retention
7
us
1.5
ms
s
25
100
-
100,000
20
Cycles
Years
-
Notes:
1. Not 100% Tested, Excludes external system level over head.
2. Typical values measured at 25°C, 3V.
3. Maximum values measured at 85°C, VDD(min).
Elite Semiconductor Memory Technology Inc.
Publication Date: Jul. 2009
Revision: 1.3 24/32