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F25L08PA-100DG 参数 Datasheet PDF下载

F25L08PA-100DG图片预览
型号: F25L08PA-100DG
PDF下载: 下载PDF文件 查看货源
内容描述: 3V只有8兆位串行闪存,配有双 [3V Only 8 Mbit Serial Flash Memory with Dual]
分类和应用: 闪存
文件页数/大小: 32 页 / 489 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
F25L08PA  
„ ERASE AND PROGRAMMING PERFORMANCE  
Limit  
Unit  
Parameter  
Symbol  
Typ2  
Max3  
200  
2
Sector Erase Time  
TSE  
TBE  
TCE  
TBP  
TPP  
90  
ms  
s
Block Erase Time  
1
10  
Chip Erase Time  
30  
30  
5
s
Byte Programming Time  
Page Programming Time  
Chip Programming Time  
Erase/Program Cycles1  
Data Retention  
7
us  
1.5  
ms  
s
25  
100  
-
100,000  
20  
Cycles  
Years  
-
Notes:  
1. Not 100% Tested, Excludes external system level over head.  
2. Typical values measured at 25°C, 3V.  
3. Maximum values measured at 85°C, VDD(min)  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Jul. 2009  
Revision: 1.7 24/32  
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