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F25L004A-100DIG 参数 Datasheet PDF下载

F25L004A-100DIG图片预览
型号: F25L004A-100DIG
PDF下载: 下载PDF文件 查看货源
内容描述: 3V只有4兆位串行闪存操作温度条件-40 ° C〜 85°C [3V Only 4 Mbit Serial Flash Memory Operation Temperature Condition -40°C ~85°C]
分类和应用: 闪存
文件页数/大小: 33 页 / 560 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
F25L004A  
Operation Temperature Condition -40°C ~85°C  
Byte-Program  
The Byte-Program instruction programs the bits in the selected  
byte to the desired data. The selected byte must be in the erased  
state (FFH) when initiating a Program operation. A Byte-Program  
instruction applied to a protected memory area will be ignored.  
Prior to any Write operation, the Write-Enable (WREN)  
instruction is initiated by executing an 8-bit command, 02H,  
followed by address bits [A23-A0]. Following the address, the data  
is input in order from MSB (bit 7) to LSB (bit 0). CE must be  
driven high before the instruction is executed. The user may poll  
the Busy bit in the software status register or wait TBP for the  
completion of the internal self-timed Byte-Program operation.  
See Figure 4 for the Byte-Program sequence.  
instruction must be executed. CE must remain active low for  
the duration of the Byte-Program instruction. The Byte-Program  
CE  
0 1 2 3 4 5 6 7 8  
1516  
2324  
3132  
MODE3  
MODE0  
39  
SCK  
SI  
02  
ADD.  
MSB  
ADD.  
ADD.  
DIN  
MSB  
MSB LSB  
HIGH IMPENANCE  
SO  
Figure 4 : BYTE-PROGRAM SEQUENCE  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Jan. 2009  
Revision: 1.3 12/33