欢迎访问ic37.com |
会员登录 免费注册
发布采购

F25L004A-100DIG 参数 Datasheet PDF下载

F25L004A-100DIG图片预览
型号: F25L004A-100DIG
PDF下载: 下载PDF文件 查看货源
内容描述: 3V只有4兆位串行闪存操作温度条件-40 ° C〜 85°C [3V Only 4 Mbit Serial Flash Memory Operation Temperature Condition -40°C ~85°C]
分类和应用: 闪存
文件页数/大小: 33 页 / 560 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
 浏览型号F25L004A-100DIG的Datasheet PDF文件第6页浏览型号F25L004A-100DIG的Datasheet PDF文件第7页浏览型号F25L004A-100DIG的Datasheet PDF文件第8页浏览型号F25L004A-100DIG的Datasheet PDF文件第9页浏览型号F25L004A-100DIG的Datasheet PDF文件第11页浏览型号F25L004A-100DIG的Datasheet PDF文件第12页浏览型号F25L004A-100DIG的Datasheet PDF文件第13页浏览型号F25L004A-100DIG的Datasheet PDF文件第14页  
ESMT  
F25L004A  
Operation Temperature Condition -40°C ~85°C  
10. The Jedec-Read-ID is output first byte 8CH as manufacture ID; second byte 20H as top memory type; third byte 13H as memory  
capacity.  
11. The Write-Enable (WREN) instruction and the Write-Status-Register (WRSR) instruction must work in conjunction of each other.  
The WRSR instruction must be executed immediately (very next bus cycle) after the WREN instruction to make both instructions  
effective. Both EWSR and WREN can enable WRSR, user just need to execute one of it. A successful WRSR can reset WREN.  
Read (33 MHz)  
The Read instruction supports up to 33 MHz, it outputs the data  
starting from the specified address location. The data output  
stream is continuous through all addresses until terminated by a  
(wrap-around) of the address space, i.e. for 4Mbit density, once  
the data from address location 7FFFFH had been read, the next  
output will be from address location 00000H.  
The Read instruction is initiated by executing an 8-bit command,  
low to high transition on CE . The internal address pointer will  
automatically increment until the highest memory address is  
reached. Once the highest memory address is reached, the  
address pointer will automatically increment to the beginning  
03H, followed by address bits [A23-A0]. CE must remain active  
low for the duration of the Read cycle. See Figure 2 for the Read  
sequence.  
CE  
MODE3  
1 2 3 4 5 6 7 8  
15 16  
23 24  
31 32  
39 40  
47 48  
55 56  
63 64  
70  
SCK MODE1  
ADD.  
MSB  
03  
ADD.  
ADD.  
SI  
MSB  
N
N+1  
DOUT  
N+2  
DOUT  
N+3  
DOUT  
N+4  
DOU T  
HIGH IMPENANCE  
SO  
DOUT  
MSB  
Figure 2 : READ SEQUENCE  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Jan. 2009  
Revision: 1.3 10/33