欢迎访问ic37.com |
会员登录 免费注册
发布采购

F25L004A 参数 Datasheet PDF下载

F25L004A图片预览
型号: F25L004A
PDF下载: 下载PDF文件 查看货源
内容描述: 为4Mbit ( 512Kx8 ) 3V只有串行闪存 [4Mbit (512Kx8) 3V Only Serial Flash Memory]
分类和应用: 闪存
文件页数/大小: 32 页 / 379 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
 浏览型号F25L004A的Datasheet PDF文件第12页浏览型号F25L004A的Datasheet PDF文件第13页浏览型号F25L004A的Datasheet PDF文件第14页浏览型号F25L004A的Datasheet PDF文件第15页浏览型号F25L004A的Datasheet PDF文件第17页浏览型号F25L004A的Datasheet PDF文件第18页浏览型号F25L004A的Datasheet PDF文件第19页浏览型号F25L004A的Datasheet PDF文件第20页  
ESMT  
F25L004A  
4K-Byte-Sector-Erase  
The Sector-Erase instruction clears all bits in the selected sector  
to FFH. A Sector-Erase instruction applied to a protected  
memory area will be ignored. Prior to any Write operation, the  
[AMS-A12] (AMS = Most Significant address) are used to determine  
the sector address (SAX), remaining address bits can be VIL or  
VIH. CE must be driven high before the instruction is executed.  
The user may poll the Busy bit in the software status register or  
wait TSE for the completion of the internal self-timed  
Sector-Erase cycle. See Figure 10 for the Sector-Erase  
sequence.  
Write-Enable (WREN) instruction must be executed. CE must  
remain active low for the duration of the any command sequence.  
The Sector-Erase instruction is initiated by executing an 8-bit  
command, 20H, followed by address bits [A23-A0]. Address bits  
CE  
15 16  
31  
23 24  
0
1
2
3
4 5 6 7 8  
MODE3  
MODE0  
SCK  
SI  
20  
ADD.  
MSB  
ADD.  
ADD.  
MSB  
HIGH IMPENANCE  
SO  
FIGURE 10 : SEQUENCE-ERASE SEQUENCE  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Apr. 2007  
Revision: 1.2 16/32  
 复制成功!