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EN29LV400B-70BIP 参数 Datasheet PDF下载

EN29LV400B-70BIP图片预览
型号: EN29LV400B-70BIP
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 256KX16, 70ns, PBGA48, FBGA-48]
分类和应用: 内存集成电路
文件页数/大小: 42 页 / 318 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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EN29LV400  
The Reset command must be issued to re-enable the device for reading array data if DQ5 goes high, or  
while in the autoselect mode. See next section for details on Reset.  
Reset Command  
Writing the reset command to the device resets the device to reading array data. Address bits are don’t-  
care for this command.  
The reset command may be written between the sequence cycles in an erase command sequence before  
erasing begins. This resets the device to reading array data. Once erasure begins, however, the device  
ignores reset commands until the operation is complete. The reset command may be written between the  
sequence cycles in a program command sequence before programming begins. This resets the device to  
reading array data (also applies to programming in Erase Suspend mode). Once programming begins,  
however, the device ignores reset commands until the operation is complete.  
The reset command may be written between the sequence cycles in an autoselect command sequence.  
Once in the autoselect mode, the reset command must be written to return to reading array data (also  
applies to autoselect during Erase Suspend).  
If DQ5 goes high during a program or erase operation, writing the reset command returns the device to  
reading array data (also applies during Erase Suspend).  
Autoselect Command Sequence  
The autoselect command sequence allows the host system to access the manufacturer and devices  
codes, and determine whether or not a sector is protected. The Command Definitions table shows the  
address and data requirements. This is an alternative to the method that requires VID on address bit A9  
and is intended for PROM programmers.  
Two unlock cycles followed by the autoselect command initiate the autoselect command sequence.  
Autoselect mode is then entered and the system may read at addresses shown in Table 4 any number of  
times, without needing another command sequence.  
The system must write the reset command to exit the autoselect mode and return to reading array data.  
Word / Byte Programming Command  
The device may be programmed by byte or by word, depending on the state of the Byte# Pin.  
Programming the EN29LV400 is performed by using a four bus-cycle operation (two unlock write  
cycles followed by the Program Setup command and Program Data Write cycle). When the program  
command is executed, no additional CPU controls or timings are necessary. An internal timer  
terminates the program operation automatically. Address is latched on the falling edge of  
or  
CE  
, whichever is last; data is latched on the rising edge of  
or  
, whichever is first.  
W E  
CE  
W E  
Programming status may be checked by sampling data on DQ7 (  
polling) or on DQ6 (toggle  
DATA  
bit). ). When the program operation is successfully completed, the device returns to read mode and  
the user can read the data programmed to the device at that address. Note that data can not be  
programmed from a 0 to a 1. Only an erase operation can change a data from 0 to 1. When  
programming time limit is exceeded, DQ5 will produce a logical “1” and a Reset command can  
return the device to Read mode.  
Unlock Bypass  
To speed up programming operation, the Unlock Bypass Command may be used. Once this feature  
is activated, the shorter two cycle Unlock Bypass Program command can be used instead of the  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
Rev. C, Issue Date: 2004/03/18  
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