EN29LV400
The automatic sleep mode minimizes Flash device energy consumption. The device automatically
enables this mode when addresses remain stable for tacc + 30ns. The automatic sleep mode is
independent of the CE#, WE# and OE# control signals. Standard address access timings provide
new data when addresses are changed. While in sleep mode, output is latched and always
available to the system. ICC4 in the DC Characteristics table represents the automatic sleep more
current specification.
Hardware Data Protection
The command sequence requirement of unlock cycles for programming or erasing provides data
protection against inadvertent writes as seen in the Command Definitions table. Additionally, the
following hardware data protection measures prevent accidental erasure or programming, which
might otherwise be caused by false system level signals during Vcc power up and power down
transitions, or from system noise.
Low VCC Write Inhibit
When Vcc is less than VLKO, the device does not accept any write cycles. This protects data during
Vcc power up and power down. The command register and all internal program/erase circuits are
disabled, and the device resets. Subsequent writes are ignored until Vcc is greater than VLKO. The
system must provide the proper signals to the control pins to prevent unintentional writes when Vcc
is greater than VLKO
.
Write Pulse “Glitch” protection
Noise pulses of less than 5 ns (typical) on
Logical Inhibit
,
or
do not initiate a write cycle.
W E
CE
OE
Write cycles are inhibited by holding any one of
= VIL,
= VIH, or
= VIH. To initiate a
W E
OE
CE
write cycle,
and
must be a logical zero while
is a logical one. If
,
CE
W E
, and
are
OE
CE
W E
OE
all logical zero (not recommended usage), it will be considered a read.
Power-up Write Inhibit
During power-up, the device automatically resets to READ mode and locks out write cycles. Even
with
W E
= V ,
= VIL and
= VIH, the device will not accept commands on the rising edge of
OE
CE
.
WE
IL
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2004/03/18
10
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
