EN29LV160A
Table 11. DC Characteristics
(Ta = 0°C to 70°C or - 40°C to 85°C; VCC = 2.7-3.6V)
Symbol
Parameter
Test Conditions
Min
Max
Unit
Typ
Input Leakage Current
Output Leakage Current
±5
±5
16
16
µA
µA
I
0V≤ V ≤ Vcc
IN
LI
I
0V≤ V
≤ Vcc
OUT
LO
Active Read Current ( Byte mode)
Active Read Current ( Word mode)
9
9
mA
mA
CE# = V ; OE# = V
IL
IH ;
I
CC1
f = 5MHZ
CE# = BYTE# =
RESET# = Vcc ± 0.3V
(Note 1)
Supply Current (Standby-
CMOS)
1
5.0
µA
I
I
CC2
CC3
Byte program, Sector or
Chip Erase in progress
20
30
mA
Supply Current (Program or Erase)
Input Low Voltage
-0.5
0.8
V
V
V
V
V
IL
0.7 x
Vcc
Vcc ±
0.3
Input High Voltage
V
IH
Output Low Voltage
0.45
V
I
= 4.0 mA
= -2.0 mA
OL
OL
0.85 x
Vcc
Vcc -
0.4V
Output High Voltage TTL
I
OH
OH
V
OH
Output High Voltage CMOS
V
I
= -100 µA,
A9 Voltage (Electronic Signature)
A9 Current (Electronic Signature)
10.5
2.3
11.5
100
V
V
ID
A9 = VID
µA
I
ID
Supply voltage (Erase and
Program lock-out)
V
LKO
2.5
V
Notes
1. BYTE# pin can also be GND ± 0.3V. BYTE# and RESET# pin input buffers are always enabled so that
they draw power if not at full CMOS supply voltages.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
26
Rev. I, Issue Date: 2008/07/17
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
