PBL 403 05
Parameter
Conditions
Symbol
Min.
Typ.
Max.
Unit
Stability and leakage spurious
Output VSWR = 6:1 all phases
All combinations of following
No parasitic oscillations
when IDD < 2.20 A
parameters: POUT=5 to 31.5dBm(50Ω)
All spurious < -36 dBm
VDD= 2.7 V to 5.1 V
RBW = 3 MHz
TAMB = -25 °C to +75 °C
Noise power
1805 - 1880 MHz
RBW = 30 kHz
935 - 960 MHz
925 - 935 MHz
-76
-82
-70
dBm
dBm
Input S11
Input S11
V
APC = 0.5 V,
-5.0
-14
-4.0
-6.0
dBm
dBm
P
OUT = 31.5dBm
Common specifications:
Parameter
Conditions
Symbol
Min.
Typ.
Max.
Unit
Isolation at GSM RF output
when DCS is active
f = f0
-20
-30
dBm
dBm
f = 2 • f0, f0 = 1750 - 1785 MHz
Isolation at DCS RF output
when GSM is active
f = 2 • f0
f = 3 • f0, f0 = 880 - 915 MHz
-18
-30
-15
-25
dBm
dBm
Power regulation characteristics:
Parameter
Conditions
Symbol
Min.
Typ.
Max.
Unit
Power control range
GSM: VAPC = 0.5 - 3.15 V
DCS: VAPC = 0.5 - 3.15 V
-20
-30
34.5
31.5
dBm
dBm
Power control slope
Switching time
VAPC = 0.5 - 3.15 V
150
2
dB/V
Step in Vref giving POUT = -15 to
32.5 dBm, up and down
VAPC <= 3.15 V
µs
Power control current
consumption
IAPC
4
5
mA
VSEL = 0 - 3 V
Band select current consumption VSEL = 0 - 3 V, VAPC <= 3.15 V
ISEL
0.01
5.5
0.1
7.0
mA
mA
Negative supply current
consumption
VSEL = 0 V, VAPC <= 3.15 V
INEG
Current generator:
Parameter
Conditions
Symbol
RON
Min.
Typ.
100
6.7
Max.
150
10
Unit
Ω
Input resistance
Charge current
VDC- VCA < 0.8 V
VDC = 1.5 - 5.0 V, VCA = 0 V
IGSAT
mA
3