epc120
Absolute Maximum Ratings (Notes 1, 2)
Recommended Operating Conditions
Voltage to any pin except VDD
-0.3V to VDD+0.3 V
Min.
Max.
Units
Supply Voltage on 2-wire bus VDD
Programming Voltage on 2-wire bus VDD
Input current at any pin except LED
Power consumption with maximum load
Storage Temperature Range (TS)
Lead Temperature solder, 4 sec. (TL)
-0.3V to +8.0V
-0.3V to +8.0V
-6mA to +6 mA
125mW
Operating Voltage on 2-wire bus VDD
Programming Voltage on VDD
4.5
5.5
V
V
7.0
8.0
-55°C to +155°C
+260°C
Operating Temperature (TO)
-40°
+5
+85
+95
°C
%
Relative Humidity (non-condensing)
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Recommended operating conditions
indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. For guaranteed specific -
ations and test conditions, see Electrical Characteristics.
Note 2: This device is a highly sensitive CMOS ac current amplifier with an ESD rating of JEDEC HBM class 0 (<250V). Handling and
assembly of this device should only be done at ESD protected workstations.
Electrical Characteristics
VDD = 4.5V … 5.5V, -40°C < TA < +85°C, unless otherwise specified
General Data
Symbol Parameter
Conditions/Comments
Values
Typ.
Units
Min.
Max.
VPP
Ripple on supply voltage,
peak to peak
2-wire interface Vdet
Input pulse IPD NST
48nA
50mV
100mV
150
350
600
2
mV
mV
mV
mA
mV
mA
72nA
200mV
108nA
IDD_OP
Vdet
Current consumption
in operation mode IPD = 0 mA
Detection level for 2-wire interface configurable
50
200
9.8
IMOD
Modulation current for 2-wire inter-
face
6.4
fclk
dfclk
VPUP
VIH
Reference clock
Internal oscillator
1
MHz
ppm/K
V
Temperature drift of the oscillator
Power-up Threshold Voltage
INPUT
640
The voltage at VDD33 when the device starts up
Logical high (VN can be either VDD or VDD33)
Logical low (VN can be either VDD or VDD33)
2.4
3
VN
0.7 *VN
GND
V
VIL
INPUT
0.3 *VN
10
V
ILEAKD
VOH
VOL
Input leakage current
Output high voltage
Output low voltage
µA
V
@ 4mA sink except pin SCK/LED
@ 4mA source
VDD- 0.5
0.5
1.3
V
ISCK/LED Source current
@ PIN SCK / LED
0.7
0.1
30
mA
V
VHist
RPU
Schmitt Trigger Hysteresis
Pull-Up Resistor
200
2
kΩ
mA
IPDDC
DC Photo Diode Current
generated by ambient light with no effect to the
sensitivity
0.0
CPD
IN_Imin
IN_Imax
IPDN
Photodiode Capacitance
Input related noise
Photodiode Capacitance
@ IPDDC =0
40
15
20
75
pF
nA RMS
nA RMS
nA
Input related noise
@ IPDDC =IPDDCMax
Photo Current Sensitivity, normal
threshold
Parameter SENSN = 011 (60nA). TPulse = 6µs
Photodiode pulse to generate a status “pulse detected”
45
60
IPDH
Photo Current Sensitivity, upper
threshold
Parameter SENSH = 011 (96nA). TPulse = 6µs
Photodiode pulse to generate a status “pulse detected”
1.4
1.6
1.8
IPDN
© 2011 ESPROS Photonics Corporation
Characteristics subject to change without notice
2
Datasheet epc12x - V2.1
www.espros.ch
EPC [ ESPROS PHOTONICS CORP ]
