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EM48BM1684LBB-6FE 参数 Datasheet PDF下载

EM48BM1684LBB-6FE图片预览
型号: EM48BM1684LBB-6FE
PDF下载: 下载PDF文件 查看货源
内容描述: [DRAM]
分类和应用: 动态存储器
文件页数/大小: 22 页 / 224 K
品牌: EOREX [ EOREX CORPORATION ]
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EM48BM1684LBB  
Output Drive Strength  
The normal drive strength got all outputs is specified to be LV-CMOS. By setting EMRS specific parameter on A6  
and A5, driving capability of data output drivers is selected.  
Temperature Compensated Self-Refresh  
TCSR controlled by programming in the extended mode register (EMRS). The memory automatically changes  
the self-refresh cycle by temperature fluctuations.  
Partial Array Self Refresh  
In EMRS setting, memory array size to be refreshed during self-refresh operation is programmable in order to  
reduce power. Data outside the defined area will not be retained during self-refresh.  
Nov. 2010  
www.eorex.com  
15/22  
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